WMSIC Electronic Components

CRMICRO F601D-G F601D

ModelF601D-G
PackageSOT-23
BrandCRMICRO
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 23+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
CRMICRO F601D-G
Type
CRMICRO
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
CRMICRO
Electronic Component
F601D-G
Electronic Component
1
Package
SOT-23
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.044g
Electronic Component
1
Electronic Component
BM0226507857
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
500mW
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
600V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

F601D-G 产品概述

一、概述

F601D-G 是华润微(CRMICRO)推出的一款高压小信号N沟道绝缘栅场效应管(MOSFET),封装为SOT-23,适合在空间受限且需耐高压、低电流的场合使用。器件标称耐压为600V,额定连续漏极电流较小(30mA),功耗上限500mW,定位于高压启动、保护与小信号开关类应用。

二、主要特性

  • 漏源电压(Vdss):600V,适用于高压边应用。
  • 阈值电压(Vgs(th)):1V @ 8.0µA,开通起始电压较低,便于驱动检测。
  • 连续漏极电流(Id):30mA,适合小电流场合,不用于大电流导通。
  • 耗散功率(Pd):500mW,SOT-23封装下热耗散有限,需注意散热。
  • 输入电容 Ciss:15.5pF,输出电容 Coss:4.7pF,反向传输电容 Crss:1.6pF,开关过程中的结电容较小,有利于快速响应和降低米勒效应。
  • 工作温度范围:-55℃~+150℃,适用于严苛温度环境。

注意:产品描述中有“600V,300Ω”的表述,未明确300Ω指何参数(可能为开路态电阻或其它),推荐以完整数据手册为准。

三、电气参数解析与设计要点

  • 小信号电流能力决定其不适合做主功率开关,适于启动电路、驱动电源的高压检测、限制或保护元件。
  • 较低的Coss、Crss 有利于快速电压变化下降低能量吸收和振铃,但米勒电容仍会影响栅极驱动波形,设计驱动电路时应考虑驱动阻抗与栅极电荷。
  • Pd 与封装限制意味着在高温和连续导通条件下需降额使用,通过增大PCB铜箔面积及合理走线改善散热。

四、典型应用场景

  • 开关电源启动电路(高压启动管/限流器)
  • 高压检测与隔离开关(例如峰值检测、保护断路)
  • 小信号高压开关或放大器前端
  • 测量仪器、电视机/显示器高压辅助电路、LED驱动的高压控制段

五、封装与布局建议

  • SOT-23 封装体积小,焊接时应保证底铜面积和热沉路径,必要时在PCB底层增加大面积铜箔并做通孔过孔连接以提高热散。
  • 栅极上加并联阻容抑制振荡,避免高速脉冲时产生不稳定。
  • 由于高压,应保持足够爬电距离和绝缘设计,防止表面闪络。

六、使用与可靠性提示

  • 器件对静电敏感,建议在贴片和手工焊接时采取ESD防护措施。
  • 在实际电路中,请参考完整数据手册的绝对最大额定值(尤其是Vgs绝对值、脉冲电流与能量吸收能力)以及典型测试条件。
  • 在高温或频繁开关的场合做热仿真与寿命评估,必要时选用额定更高的器件或并联/级联方案。

七、选型建议

如需在SOT-23封装下实现高压小信号开关或启动保护,F601D-G 提供了600V耐压与低结电容的组合,是较为合适的选择。若应用要求更大导通电流或更低导通损耗,请考虑功率型封装或低Rds(on)的高压MOSFET,并以华润微完整数据手册为最终判定依据。

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