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CRMICRO CRSM034N06L2
Configuration
1 options
Configuration
20+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- CRMICRO CRSM034N06L2
- Type
- CRMICRO
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- CRMICRO
- Electronic Component
- CRSM034N06L2
- Electronic Component
- 1
- Package
- DFN-8(5x6)
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.18g
- Electronic Component
- 1
- Electronic Component
- BM0226479210
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 79.1W
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
- Voltage(Vdss)
- 60V
- Capacitor(Ciss)
- 3.224nF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
CRSM034N06L2 产品概述
一、产品简介
CRSM034N06L2 是华润微（CRMICRO）推出的一款高性能 60V N 沟道功率 MOSFET，采用紧凑的 DFN-8 (5×6 mm) 封装，工作温度范围宽 (-55℃～+150℃)。器件以低导通电阻和大电流能力为特征，适合中高功率密度的开关和分流应用。
二、主要特点
- 漏源耐压（Vdss）：60V，适合中压域电源与转换电路；
- 低导通电阻：RDS(on)=2.8 mΩ @ Vgs=10V，导通损耗低；
- 高额定电流：连续漏极电流 Id = 80A（具体能力受 PCB 散热影响）；
- 栅极电荷 Qg = 54.2 nC @ 10V，输入电容 Ciss = 3.224 nF @ 30V；
- 阈值电压 Vgs(th) ≈ 1.7V，兼顾驱动灵敏度与关断可靠性；
- 额定耗散功率 Pd = 79.1W（在规定散热条件下）。
三、电性能要点
该器件在 Vgs=10V 条件下表现出极低的导通电阻，适合要求低导通损耗的高电流路径。较大的栅极电荷和 Ciss 指出器件在高速开关时需要较强的栅极驱动能力，以实现快速切换并控制开关损耗与电磁干扰。
四、封装与热管理
DFN-8 (5×6) 封装体积小、热阻低，有利于在有限面积内实现较好散热。为了发挥器件的高电流和高耗散能力，建议在 PCB 设计时使用较大的沉铜导热垫、通过多层过孔连接散热层，并关注焊盘热阻与焊接工艺。
五、典型应用与使用建议
适用于开关电源（同步整流、主开关）、电机驱动、负载开关、高效率电力变换等场景。建议采用专用栅极驱动器或大电流驱动通道，以应对 54.2 nC 的栅极充电需求，并通过适当的栅阻抑制振铃与减小 EMI。
六、设计注意事项
- 连续 80A 为器件在理想散热条件下的参考值，实际允许电流取决于 PCB 散热与环境温度；
- 栅极驱动电压以 10V 为参考测得 RDS(on)，若采用低电压驱动，应确认导通损耗是否满足系统要求；
- 注意开关瞬态（dV/dt、dI/dt）控制，合理配置阻尼与吸收网络，保护器件与系统稳定性；
- 在并联使用时注意电流共享与驱动一致性。
总体而言，CRSM034N06L2 在中等电压、高电流应用中提供了低导通损耗与紧凑封装的平衡，是要求高效率与高功率密度设计的合适选择。若需更详细的参数曲线或封装焊盘规范，可参考厂商完整数据手册。
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