WMSIC Electronic Components

DIODES DMP6110SVT-7 DMP6110SVT

ModelDMP6110SVT-7
PackageTSOT-26
BrandDIODES
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
DIODES DMP6110SVT-7
Type
TSOT-26
Unit
Electronic Component
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
DIODES
Electronic Component
DMP6110SVT-7
Electronic Component
1
Package
TSOT-26
Electronic Component
1 P
Electronic Component
MOSFET
Electronic Component
0.022g
Electronic Component
1
Electronic Component
BM0093065074
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
1.2W
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
60V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

DMP6110SVT-7 产品概述

1. 产品简介

DMP6110SVT-7 是一款由美台(DIODES)公司生产的高性能P沟道MOSFET,专为各种电源管理与开关应用而设计。该器件在高达60V的漏源电压(Vdss)和7.3A的连续漏极电流(Id)下工作,具有优秀的电气特性和可靠性。其低电阻导通特性以及广泛的工作温度范围,使其适用于各种工业和消费电子产品中,对电源效率有较高要求的场合。

2. 技术参数

DMP6110SVT-7的主要技术参数如下:

  • 漏源电压(Vdss): 60V
  • 连续漏极电流(Id): 7.3A (25°C时,Tc)
  • 栅源极阈值电压(Vgs(th)): 3V @ 250µA
  • 漏源导通电阻(Rds(on)): 105mΩ @ 4.5A, 10V
  • 最大功率耗散: 1.2W (Ta=25°C)
  • 最大栅极电压: ±20V
  • 栅极电荷(Qg): 17.2nC @ 10V
  • 输入电容(Ciss): 969pF @ 30V
  • 工作温度范围: -55°C 到 150°C
  • 封装类型: TSOT-26 (SOT-23-6细型表面贴装封装)

这些参数使得DMP6110SVT-7在负载开关、直流-直流转换器和马达控制等应用中具备显著的优势。

3. 应用场景

DMP6110SVT-7适用于多种应用领域,包括但不限于:

  • 电源管理: 该器件的高电压和电流能力,能够满足开关电源和线性电源管理电路的需求。
  • 交流电机控制: 在电机驱动和控制电路中,DMP6110SVT-7能有效切换电流,提高系统的效率和性能。
  • 负载开关: 由于其低导通电阻和快速开关能力,适合用作负载开关,能够减少功耗并提高响应速度。

4. 性能优势

DMP6110SVT-7产品具有以下性能优势:

  • 低导通电阻: 105mΩ的导通电阻在提供足够电流的情况下,能显著降低功耗,提升能效。
  • 高耐压能力: 支持高达60V的漏源电压使得该器件在极端条件下依然稳定工作,扩展了其应用范围。
  • 广泛的工作温度: -55°C到150°C的工作温度范围使得该器件可以在各种恶劣环境中稳定工作,适合高可靠性的工业应用。
  • 小巧封装: TSOT-26表面贴装封装设计,相比传统封装可节省电路板空间,适应小型化设计趋势。

5. 结论

DMP6110SVT-7是一款功能强大的P沟道MOSFET,凭借其出色的电气性能和广泛的工作温度范围,成为多种电子应用的理想选择。无论是在电源管理、电机控制还是负载开关领域,它都表现出色。对于寻求高效、可靠且空间节省的解决方案的设计师和工程师而言,DMP6110SVT-7无疑是一个值得信赖的选择。随着电子设备对高效能和高可靠性的需求不断增加,DMP6110SVT-7将在未来电子设计中发挥关键作用。

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