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DOWO SS8050 200-350 SS8050
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- DOWO SS8050 200-350
- Type
- DOWO
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- DOWO
- Electronic Component
- SS8050 200-350
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 NPN
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.033g
- Electronic Component
- 1
- Electronic Component
- BM0231033189
- Operating Temperature
- 55℃~+150℃
- Transistor Type
- NPN
- Frequency(f T)
- 100MHz
- Power Dissipation(Pd)
- 300mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SS8050 200-350 产品概述
一、特性概述
SS8050 200-350 为 DOWO（东沃）出品的低压中功率 NPN 晶体管，采用 SOT-23 小封装，适用于空间受限的消费电子与工业控制场景。器件在中小电流区具有较高的直流电流增益与良好的频率响应，适合开关和小信号放大应用。
二、主要电气参数
- 晶体管类型：NPN
- 集电极电流（Ic）：最大 1.5A
- 集-射极击穿电压（Vceo）：25V
- 耗散功率（Pd）：300mW（SOT-23 封装，环境与 PCB 散热条件决定实际功耗）
- 直流电流增益（hFE）：120（典型值，测量条件 100mA, Vce=1V）
- 特征频率（fT）：100MHz（典型）
- 集电极截止电流（Icbo）：100nA（典型）
- 集电极饱和电压（VCE(sat)）：500mV（典型，饱和测量条件影响数值）
- 射基极击穿电压（Vebo）：5V
三、封装与引脚
封装：SOT-23，适合表面贴装工艺。
典型引脚排列（SOT-23，仅供参考，具体以厂家数据手册为准）：1 — 基极，2 — 射极，3 — 集电极。SOT-23 的热阻和 PCB 布局对器件的最大耗散功率影响较大，推荐在设计时留出散热铜箔并考虑热仿真。
四、应用场景
- 低电压冷源侧的小信号放大（前级放大器、驱动电路）
- 便携和消费类设备中的通用开关元件
- 驱动小功率继电器、光耦或云母式负载（受限于额定电流和耗散功率）
- 信号整形、缓冲与电平转换场合
五、设计与使用建议
- 在接近最大 Ic（1.5A）和 Pd（300mW）工作时，务必评估 PCB 的散热能力；SOT-23 在高平均功率下易发热，应限制占空比或采用散热铜箔。
- 避免基极对射极超过 Vebo（5V），防止基极-射极反向击穿。
- 对于需要低饱和压的开关应用，留意 VCE(sat) 约 500mV，必要时采用并联或选用低 VCE(sat) 器件。
- 高频小信号放大时，fT≈100MHz 表明在几十 MHz 范围内仍有可用增益，但电路布局需抑制寄生电容和走线电感。
六、可靠性与采购提示
选型时请参考 DOWO 官方数据手册以获取完整的绝对最大额定值、典型特性曲线和封装尺寸。批量采购建议确认批次一致性与出厂测试记录，针对关键应用可要求放大样品进行高温老化及热循环测试。
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