WMSIC Electronic Components

EVERLIGHT EL817S1(C)(TU)-G EL817S1

ModelEL817S1(C)(TU)-G
PackageSMD-4P
BrandEVERLIGHT
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
EVERLIGHT EL817S1(C)(TU)-G
Type
EVERLIGHT
Minimum package
2000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
EVERLIGHT
Electronic Component
EL817S1(C)(TU)-G
Electronic Component
1
Package
SMD-4P
Electronic Component
Transistor Output Optocoupler
Electronic Component
4.573g
Electronic Component
1
Electronic Component
18us
Electronic Component
BM0228737418
Operating Temperature
55℃~+110℃
Load Voltage
35V
Type
DC
Output Current
50mA
Output Type
Photoelectric Transistor
(Pd)
200mW

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

EL817S1(C)(TU)-G 产品概述

一、产品简介

EL817S1(C)(TU)-G 是台湾亿光(EVERLIGHT)出品的一款晶体管输出光耦,输入端为直流 LED,输出端为光电三极管。器件为 SMD-4P 封装,适用于需要电气隔离与信号传输的低速控制场合。产品强调高隔离耐压、宽 CTR 范围以及较低的饱和压降,适合开关量和低速模拟信号隔离。

二、主要参数

  • 输入类型:DC LED;正向压降 Vf ≈ 1.4V(典型约 1.2–1.4V)
  • 最大正向电流 If(max):60mA(绝对最大)
  • 输出类型:光电三极管(NPN)
  • 最大集电电流 Ic(max):50mA
  • 集-射极饱和电压 VCE(sat):约 100mV(测试条件示例:If=20mA、Ic=1mA)
  • 电流传输比 CTR:最小 50%,最高可达 600%(与 If、测试条件相关)
  • 隔离电压 Vrms:5kV
  • 直流反向耐压 Vr(LED):6V
  • 负载电压(输出端)最大:35V
  • 上/下降时间 tr/tf:约 18 µs / 18 µs(典型)
  • 总功耗 Pd:200mW
  • 工作温度:-55°C ~ +110°C
  • 封装:SMD-4P(TU 卷带式)

三、特性与优势

  • 高隔离强度:5kVrms 绝缘等级,适合隔离要求严格的系统。
  • 宽 CTR 范围:50%~600%,可覆盖低输入驱动到高灵敏度应用,但 CTR 随温度与 If 变化显著。
  • 低 VCE(sat):在典型驱动条件下饱和压降低,有利于降低开关损耗与发热。
  • SMD 封装便于自动化贴装,适合批量生产与紧凑 PCB 设计。

四、典型应用

  • 微控制器与高压电路之间的信号隔离(开关量输入/输出)
  • 电源管理、继电器驱动和家电控制板的低速隔离
  • 工控接口、通信线路保护与传感器信号隔离

五、使用建议与电路指导

  • LED 限流电阻计算:R = (Vcc - Vf) / If。示例:5V 系统,若目标 If=1mA,R ≈ (5-1.4)/1mA = 3.6kΩ;若 If=20mA,R ≈ 180Ω。
  • 输出侧需外接上拉电阻到所需逻辑电平,且注意不要超过输出端 35V 与器件功耗限制(Pd=200mW)。
  • CTR 随 If 和温度变化明显,低 If 情况下 CTR 可能偏低,设计时应留有裕量。
  • 避免长时间在 If 接近 60mA 的条件下工作,应按照绝对最大额定值进行短时脉冲驱动并作适当退让。
  • 对于关键可靠性场合,建议在实际应用中做温度与长期老化测试以确定稳定性。

六、封装与可靠性注意事项

  • SMD-4P 适合贴片工艺,推荐在回流焊工艺中遵循厂商建议的温度曲线(具体曲线请参考厂方数据手册)。
  • 布局时确保输入与输出走线保持足够爬电距离,配合隔离槽或相应的 PCB 设计规范以提升系统耐压性能。
  • 在高湿或高压差环境下使用时,注意进行绝缘加强与封装保护。

七、结论

EL817S1(C)(TU)-G 提供了高隔离耐压、低饱和压降和广泛的 CTR 范围,适用于各类需要电气隔离的低速控制与信号传输场景。设计时应重点关注 CTR 的工况依赖、功耗限制与封装的热/工艺要求,以确保长期稳定可靠。更多详细参数与应用参考请参阅厂商完整数据手册。

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