WMSIC Electronic Components

EVERLIGHT EL817M(B)-F EL817M

ModelEL817M(B)-F
PackageDIP-4
BrandEVERLIGHT
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
EVERLIGHT EL817M(B)-F
Type
EVERLIGHT
Minimum package
2500 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
EVERLIGHT
Electronic Component
EL817M(B)-F
Electronic Component
1
Package
DIP-4
Electronic Component
Transistor Output Optocoupler
Electronic Component
0.23g
Electronic Component
1
Electronic Component
18us
Electronic Component
BM0227528115
Operating Temperature
55℃~+110℃
Load Voltage
35V
Output Current
50mA
Output Type
Photoelectric Transistor
Output Channel Count
1
(tr)
18us

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

EL817M(B)-F 产品概述

一、产品简介

EL817M(B)-F 是台湾亿光(EVERLIGHT)出品的一款单通道光电三极管输出光耦,采用 DIP-4 插件封装,面向需要电气隔离与信号传输的工业与消费类电路。器件以发光二极管驱动光电三极管,实现低电压侧与高电压侧之间的可靠隔离,典型用于逻辑电平隔离、开关信号传输与微弱信号放大。

二、主要特性

  • 输出类型:光电三极管(Phototransistor)
  • 隔离电压(Vrms):5 kV,适合常见隔离要求
  • 输出电流(IC 最大):50 mA,支持较大负载驱动
  • 负载电压(VCEO 或 VCE(max)):35 V
  • 发光二极管正向压降(Vf):约 1.2 V
  • 直流反向耐压(Vr,LED):6 V
  • 集射极饱和电压 VCE(sat):约 100 mV(在 IF=20 mA、IC=1 mA 条件下)
  • 电流传输比(CTR):最小 130%,最大 260%,表明在适当驱动下有较高的放大倍数
  • 上升/下降时间(tr / tf):约 18 μs / 18 μs(典型值)
  • 工作温度范围:-55 ℃ ~ +110 ℃
  • 封装:DIP-4,单通道,易于插装与替换

三、电气与性能说明

EL817M(B)-F 的高 CTR(130%–260%)使其在低 LED 驱动电流下即可获得较大的输出电流,适合对增益要求较高的信号隔离场合。VCE(sat) 低(约 100 mV)意味着在饱和导通时压降小,有利于提高电源利用效率和减小功耗。开关速度为数十微秒级,适用于中低速信号隔离,但不适合高速数字通信或精细脉冲传输。

四、封装与引脚

器件采用标准 DIP-4 封装,利于通孔焊接与实际装配。单通道布局简洁,适合在 PCB 上成排放置以实现多路隔离。封装在机械强度与散热上适合一般工业环境。

五、典型应用场景

  • 工业控制信号隔离:PLC、继电器驱动信号隔离
  • 开关电源与电机驱动的逻辑隔离
  • 微控制器与高电压部分的电平隔离
  • 模拟/数字接口保护与噪声耦合抑制

六、使用建议与注意事项

  • 驱动 LED 时注意不要超过额定正向电流,合理设计限流电阻;避免反向电压超过 6 V。
  • 输出侧负载与 VCE(max)=35 V 要匹配,避免过压导致器件击穿。
  • CTR 范围较大,批次与温度会影响实际放大倍数。设计时应按最小 CTR 保守估算,必要时进行样片测试以确定合适的负载电阻与判定阈值。
  • 在高噪声或高频场合,考虑在输出侧并联滞后或 RC 抑制网络以改善抗干扰性。
  • 若用于安全关键应用,应结合系统级隔离与认证要求进行评估,器件耐压与爬电距离需满足最终产品规范。

七、规格摘要

品牌:EVERLIGHT(台湾亿光);型号:EL817M(B)-F;封装:DIP-4;隔离电压:5 kVrms;输出电流:50 mA;Vf 约 1.2 V;Vr 6 V;VCE(sat) 约 100 mV(IF=20 mA、IC=1 mA);CTR:130%–260%;tr/tf:18 μs;工作温度:-55 ℃ ~ +110 ℃。

如需电路示例、典型应用图或进一步的封装尺寸与管脚定义,可参考厂家数据手册或提供具体应用场景以便给出更详细的设计建议。

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