WMSIC Electronic Components

EVERLIGHT EL817(C)-G EL817

ModelEL817(C)-G
PackageDIP-4
BrandEVERLIGHT
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
EVERLIGHT EL817(C)-G
Type
EVERLIGHT
Unit
Electronic Component
Minimum package
2500 管

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
EVERLIGHT
Electronic Component
EL817(C)-G
Electronic Component
1
Package
DIP-4
Electronic Component
Transistor Output Optocoupler
Electronic Component
0.37g
Electronic Component
1
Electronic Component
18us
Electronic Component
BM0228737425
Operating Temperature
55℃~+110℃
Load Voltage
35V
Type
DC
Output Current
50mA
Output Type
Photoelectric Transistor

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

EL817(C)-G 产品概述

一、产品简介

EL817(C)-G 是台湾亿光(EVERLIGHT)推出的一款晶体管输出光耦合器,采用 DIP-4 封装,输入为直流(DC)发光二极管,输出为光电三极管。器件用于实现信号和电源回路之间的电气隔离,适合需要高隔离电压与较大输出驱动能力的场合。

二、主要特点

  • 隔离耐压高:最大隔离电压可达 5 kVrms,适合工业与电源侧的隔离防护需求。
  • 宽广的电流传输比(CTR):最小 50%,饱和值可达 600%,在不同工作点下能提供灵活的增益余量。
  • 输出能力强:最大输出电流可达 50 mA,负载电压最高 35 V,适用于驱动下游晶体管或逻辑输入。
  • 低饱和压:集射极饱和电压 VCE(sat) ≈ 100 mV(典型工况),有利于降低导通损耗。
  • 工作温度范围宽:-55 ℃ 至 +110 ℃,适合严苛环境使用。
  • 响应速度中等:上升/下降时间约 18 µs,适合一般控制与信号隔离,但非高速数字通信专用。

三、关键规格(主要参数一览)

  • 隔离电压 (Vrms):5 kV
  • 输入类型:DC(发光二极管)
  • 正向压降 (Vf):约 1.2 V(典型)
  • 正向电流 (If):最大 60 mA
  • 直流反向耐压 (Vr):6 V
  • 电流传输比 (CTR):最小 50%,最大/饱和值 600%
  • 输出类型:光电三极管
  • 最大输出电流:50 mA
  • 负载电压:35 V
  • 集射极饱和电压 VCE(sat):约 100 mV(指定测试条件下)
  • 上升/下降时间:约 18 µs
  • 总功耗 Pd:200 mW
  • 输出通道数:1
  • 封装:DIP-4
  • 工作温度:-55 ℃ ~ +110 ℃

四、典型应用

  • 工业控制与传感器信号隔离
  • 电源管理与开关电源的信号反馈隔离
  • 微控制器与高电压电路之间的接口保护
  • 家电、通信设备中低速数字隔离
  • 需要中等响应速度与较高隔离耐压的系统

五、设计与使用建议

  • 根据实际工作点选择合适的输入限流电阻,以限制 If ≤ 60 mA 并获得期望 CTR。
  • CTR 受温度与批次影响较大,设计时应考虑最小 CTR(50%)的最坏情形,保证在最不利条件下仍能满足逻辑阈值或驱动需求。
  • 输出为光电三极管,若需更低饱和压或更快切换,可通过后级放大或加速电路优化。
  • 注意封装散热与总功耗 Pd(200 mW)限制,长期高 If/高 Ic 工况需留有余量。
  • 在高压隔离应用中,遵守爬电距离、绝缘材料和工艺要求,以确保长期可靠性。

EL817(C)-G 以其高隔离电压、较大输出能力和宽温度范围,适合在工业与电源类产品中作为可靠的信号隔离元件。根据系统需求合理选型与电路设计,可充分发挥其性能优势。

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