WMSIC Electronic Components

EVERLIGHT EL817S1(D)(TU)-G EL817S1

ModelEL817S1(D)(TU)-G
PackageSOP-4-2.54mm
BrandEVERLIGHT
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
EVERLIGHT EL817S1(D)(TU)-G
Type
EVERLIGHT
Minimum package
2000

Technical parameters

Electronic Component
EVERLIGHT
Electronic Component
EL817S1(D)(TU)-G
Electronic Component
1
Package
SOP-4-2.54mm
Electronic Component
Transistor Output Optocoupler
Electronic Component
0.456g
Electronic Component
1
Electronic Component
18us
Electronic Component
BM0229985834
Operating Temperature
55℃~+110℃
Load Voltage
35V
Type
DC
Output Current
50mA
Output Type
Photoelectric Transistor
(Pd)
200mW
Output Channel Count
1

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

EL817S1(D)(TU)-G 产品概述

一、简介

EL817S1(D)(TU)-G 是台湾亿光(EVERLIGHT)推出的一款单通道晶体管输出光电耦合器,输入为直流 LED,输出为光电三极管。该器件以高隔离电压、宽工作温度和较低饱和电压为主要特点,适用于信号隔离与电平转换场合。

二、主要参数

  • 输入类型:DC(发光二极管)
  • 输出类型:光电三极管(晶体管输出)
  • 正向压降 (Vf):1.2 V
  • 正向电流 (If):最高 60 mA(使用时应参考安全工作区)
  • 输出电流:50 mA
  • 隔离电压 (Vrms):5 kV
  • 直流反向耐压 (Vr):6 V
  • 负载电压:35 V
  • 输出通道数:1 通道
  • 集射极饱和电压 VCE(sat):100 mV(标称条件:20 mA,1 mA 说明于规格书)
  • 上升/下降时间(tr/tf):18 µs / 18 µs
  • 工作温度范围:-55 ℃~+110 ℃
  • 电流传输比 (CTR):最小 50%,最大(饱和值)600%
  • 总功耗 (Pd):200 mW
  • 封装:SOP-4,2.54 mm 间距

三、主要特点

  • 高隔离强度:5 kV RMS 隔离等级,保障信号侧与电源侧的绝缘安全。
  • 宽 CTR 范围:50%~600%,适应不同增益需求(请按测试条件选型)。
  • 低饱和电压:集电极-发射极饱和电压低至约 100 mV,有利于降低开关损耗。
  • 中速响应:上升/下降时间约 18 µs,适合一般控制与信号传输场景。
  • 宽温度适应性:工作温度覆盖工业级应用需求。

四、典型应用

  • MCU/单片机与高压回路之间的信号隔离与接口驱动
  • 开关电源的反馈与隔离检测
  • 中小功率继电器、继电器驱动电路的前端隔离
  • 工业控制、仪表和通信设备的接口保护

五、使用建议与注意事项

  • 输入侧应控制 If 在安全范围内(参考最大 60 mA),短时允许但应避免长期过驱动导致寿命下降。
  • 输出侧负载电压不得超过 35 V,集电极电流请勿超过 50 mA,以免超出功耗限值(Pd 200 mW)。
  • 注意正向反向电压限制:LED 反向耐压 Vr = 6 V,不可反向施加高压。
  • 设计时应按规格书选取合适的上拉/下拉电阻以获得所需响应速度与 CTR;较大的负载电阻会降低输出电流与速度。
  • 保持器件工作环境在额定温度范围内,并注意焊接与回流工艺参数以避免封装热损伤。
  • 若用于高隔离系统,建议按标准进行耐压/绝缘测试并预留足够爬电距离。

六、封装信息

  • 封装形式:SOP-4(2.54 mm 引脚间距),单通道封装,便于 PCB 布局与批量生产组装。

如需更详细的电气特性曲线、典型应用电路或封装尺寸图,建议参考 EVERLIGHT 官方规格书与器件参数表以获得精确测试条件与限值说明。

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