WMSIC Electronic Components

EVERLIGHT IR333C-A R-grade IR333C

ModelIR333C-A R
PackageThrough-hole, D=5mm
BrandEVERLIGHT
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 24+

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Technical data

Product details

19 specifications

Core information

Product name
EVERLIGHT IR333C-A R
Type
EVERLIGHT
Minimum package
500

Technical parameters

Electronic Component
EVERLIGHT
Electronic Component
IR333C-A R
Electronic Component
1
Package
Through-hole, D=5mm
Electronic Component
940nm
Electronic Component
Infrared Emitter
Electronic Component
0.159g
Electronic Component
1
Electronic Component
BM0258724533
Operating Temperature
25℃~+85℃
Current
100mA
Electronic Component
7.8mW/sr@IF=20mA
(Vf)
1.5V
Power Dissipation(Pd)
150mW
Electronic Component
500
Voltage Rating(Vr)
5V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

EVERLIGHT IR333C-A R档 产品概述

一、产品简介

IR333C-A R档为台湾亿光(EVERLIGHT)5mm穿透式红外发射二极管(LED),标称主波长940nm,属于不可见红外波段发射器件。该器件以高辐射强度、紧凑封装及良好的电热特性适配于遥控、光电检测、近距离通信及存在/障碍检测等应用。注意本器件为发射端(红外LED),并非接收头。

二、主要技术参数

  • 波长(λp):940 nm(中心波长,红外不可见)
  • 正向压降(Vf):典型 1.5 V
  • 正向电流(If,最大值):100 mA(为最大容许电流,应按应用和散热条件限流)
  • 辐射强度:7.8 mW/sr @ If = 20 mA
  • 功率耗散(Pd):150 mW(器件在封装外壳能承受的最大功率耗散)
  • 直流反向耐压(Vr):5 V(建议避免反向偏压或仅在极短时刻下使用)
  • 工作温度范围:-25 ℃ ~ +85 ℃
  • 封装形式:插件(Through-hole),LED D5 × 8.6 mm

三、光电特性说明

在常用驱动电流20 mA条件下,辐射强度可达约7.8 mW/sr,适合与常见940 nm接收器(硅或硅基光电二极管/接收模块)配合使用。发射角度与辐射分布受透镜形状影响,典型5mm圆头封装为中等到较宽发散角,便于近距均匀照射。若需远距或窄束照射,应配合透镜或采用聚光封装。

四、封装与机械特性

标准5mm插件封装(直径5mm,总长约8.6mm),便于手工装配和波峰/回流焊后插装固定。引脚间距与穿孔尺寸符合通用DIP安装规范,便于在板上固定与焊接。

五、典型应用场景

  • 遥控发射(红外遥控器)
  • 红外对射/接近传感器(短距障碍检测)
  • 红外通信链路(短距离数据传输)
  • 人体/物体存在检测、自动门/自动扶梯等控制系统
    在选择接收端时,应匹配接收器的响应峰值与940 nm发射峰值,以获得最佳接收灵敏度。

六、典型驱动电路与使用建议

  • 恒流驱动优先:建议使用恒流源或串联限流电阻稳定If。
  • 串联电阻计算示例:以5 V供电、目标If = 20 mA为例,R = (5.0 − 1.5) / 0.02 = 175 Ω,可选标准值180 Ω;以3.3 V供电、If = 20 mA时,R ≈ 90 Ω。
  • 关于大电流脉冲:虽然允许峰值高于20 mA的脉冲驱动,但应控制脉冲宽度和占空比,确保平均功耗低于Pd并满足热阻限制,避免因结温升高造成失效。
  • 反向电压:Vr = 5 V,避免长期反向偏置。

七、可靠性与包装

器件适应工业级工作温度(-25 ℃ 至 +85 ℃)。在高温环境或高平均功率应用下,应关注结温管理与热散逸,必要时降低驱动电流或增加散热/降低占空比。出厂通常为防潮防静电包装,建议在干燥箱或防潮条件下储存与运输。

八、使用注意事项

  • 禁止超额正向电流或超过功率耗散的连续运行,避免器件过热。
  • 避免反向电压超过指定值,避免瞬态浪涌。
  • 焊接时遵循厂商焊接温度/时长建议,避免热损伤;若不确定,请使用手工低温快焊或参照通用LED焊接工艺。
  • 红外光对人眼虽不可见,但长时间高功率照射仍可能对眼睛造成风险,调试与测试时避免直视发光面并采取必要防护。

结论:IR333C-A R档为一款性能稳定、封装通用的940 nm红外发射LED,适合多种近距红外发射应用。选型时应综合考虑驱动方式、热管理和接收端匹配以获得最佳系统性能与长期可靠性。

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