WMSIC Electronic Components

EVERLIGHT 4N27

Model4N27
Package6-DIP
BrandEVERLIGHT
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 23+

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
EVERLIGHT 4N27
Type
EVERLIGHT
Unit
Electronic Component
Minimum package
65 管

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
EVERLIGHT
Electronic Component
4N27
Electronic Component
1
Package
6-DIP
Electronic Component
Transistor Output Optocoupler
Electronic Component
0.7g
Electronic Component
1
Electronic Component
3us
Electronic Component
BM0259715358
Operating Temperature
55℃~+110℃
Load Voltage
80V
Type
DC
Output Type
Photoelectric Transistor
(Pd)
200mW

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

4N27 产品概述

一、产品简介

EVERLIGHT(台湾亿光)4N27 是一款经典的光电耦合器(optocoupler),输入为发光二极管(DC 驱动),输出为光敏三极管,封装为带基极引出的 6-DIP(带基座)。该器件提供高达 5kVrms 的隔离电压,适用于需要电气隔离与小信号传输的工业和消费类电路。典型特性为低功耗、较低饱和电压和中等速度响应(上升/下降时间约 3μs),适合低速数字隔离与模拟信号的简单接口。

二、主要电气参数

  • 输入正向压降(Vf):典型约 1.2V(在额定 If 下)。
  • 最大正向电流(If):60mA(短时或额定极限,建议按数据手册峰值与平均值控制)。
  • 直流反向耐压(Vr):9V。
  • 隔离耐压(绝缘耐压):5kVrms(输入与输出之间的最大额定隔离)。
  • 输出允许负载电压:最高 80V(集电极-发射极间能承受的电压)。
  • 集射极饱和电压 VCE(sat):约 500mV(典型条件:If=50mA,Ic=2mA)。
  • 电流传输比(CTR)最小值:10%(CTR 随 If、温度及批次变化较大)。
  • 上升/下降时间(tr/tf):约 3μs(用于中低速信号)。
  • 总功耗(Pd):200mW。
  • 工作温度范围:-55℃ 至 +110℃。

三、封装与机械特性

  • 封装类型:6-DIP,带独立基极引脚(可用于基极偏置以调整开关速度或实现线性放大)。
  • 引脚配置利于在 PCB 上实现较大爬电/爬距距离,满足高压隔离设计要求。
  • 机械尺寸和引脚排列参考厂商封装图,装配与波状焊接需注意温度限制和锡膏工艺。

四、典型应用场景

  • 微控制器与高压电路之间的逻辑隔离。
  • 开关电源反馈讯号隔离(低速反馈环路)。
  • 工业控制信号隔离、传感器接口。
  • 样本/样品切换、继电器驱动前端隔离(作为低侧检测或逻辑隔离)。 注意该器件因 CTR 较低且响应时间为微秒级,不适合高速数据通信或精确高速模拟信号传输。

五、设计与使用要点

  • 输入侧限流:按 Vf≈1.2V,若驱动电压为 5V,串联限流电阻 R = (5V−1.2V)/If 计算;实际 If 建议远低于 60mA 峰值以延长寿命并降低热耗。
  • CTR 可变性:CTR 与 If、温度、器件批次关系密切;若依赖精确放大倍数,应进行实际测试或选择 CTR 更高的型号。
  • 利用基极引脚:外接基极电阻可加速关断、改善饱和或实现部分线性放大功能。基极偏置须参考厂商推荐值,避免超出限制。
  • 功耗与散热:单片总功耗 200mW,工作时应避免长期高 If 与高 Ic,以免超出热极限;在高温环境下适当降额使用。
  • 隔离与安规:5kVrms 隔离能力适用于一般工业应用;工程实际应同时满足爬电距离和材料特性,必要时配合保险元件与板间隔离策略。

六、选型建议

若需要更高 CTR、更快响应或更高功耗能力,可考虑同类具有改进参数的光耦(例如高速光耦或带缓冲器输出的型号)。若应用为高速数字通信或精密模拟,建议选择专用高速或线性光耦。对于通用低速隔离与工业控制场合,EVERLIGHT 4N27 以其 5kVrms 的隔离能力和带基极封装,提供了成本与性能的平衡选择。

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