WMSIC Electronic Components

ElecSuper IRFR1205TRPBF-ES IRFR1205TRPBF

ModelIRFR1205TRPBF-ES
PackageTO-252
BrandElec Super
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 24+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Elec Super IRFR1205TRPBF-ES
Type
ELECSUPER
Minimum package
2500 编带

Technical parameters

Electronic Component
Electronic Component
Electronic Component
ELECSUPER
Electronic Component
IRFR1205TRPBF-ES
Electronic Component
1
Package
TO-252
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.463g
Electronic Component
1
Electronic Component
BM0234660052
Power Dissipation(Pd)
25W
Electronic Component
Electronic Component
Electronic Component
2500
Voltage(Vdss)
60V
Capacitor(Ciss)
860pF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

IRFR1205TRPBF-ES 产品概述

一、产品简介

IRFR1205TRPBF-ES 是 ElecSuper(静芯微)推出的一款 N 沟道功率 MOSFET,适用于中低压、高电流的开关和线性负载场合。器件在 TO-252 封装中提供良好的导热路径与面积利用率,单片规格可满足常见的电源管理和电机驱动需求。

二、主要规格

  • 类型:N 沟道 MOSFET
  • 漏源耐压 Vdss:60 V
  • 连续漏极电流 Id:20 A
  • 导通电阻 RDS(on):26 mΩ @ Vgs=10 V;33 mΩ @ Vgs=4.5 V
  • 最大耗散功率 Pd:25 W(封装及散热条件相关)
  • 阈值电压 Vgs(th):1.6 V @ Id=250 µA
  • 总栅极电荷 Qg:20.3 nC @ Vgs=10 V
  • 输入电容 Ciss:860 pF;反向传输电容 Crss:51 pF;输出电容 Coss:62 pF
  • 封装:TO-252

三、关键特性与优势

  • 低导通电阻在满栅压(10 V)下可显著降低导通损耗,适合高效率设计。
  • 中等栅极电荷(20.3 nC)在开关速度与驱动功率之间取得平衡,既可实现较快切换又不会对驱动器造成过重负担。
  • 60 V 电压等级适合汽车附件、工业电源与中间母线应用。
  • TO-252 封装便于 PCB 安装和散热设计,适合批量生产与自动贴装。

四、典型应用场景

  • 同步整流和降压转换器(DC-DC)
  • 马达驱动开关单元与负载开关
  • 开关电源与功率管理模块
  • 通信设备与工业控制的功率开关

五、封装与热管理建议

  • 封装为 TO-252,建议在 PCB 采用对应散热铜箔和焊盘,必要时结合过孔导入底层散热层。
  • 在实际电流条件下按 P = I^2·RDS(on) 估算导通损耗,并结合开关损耗(与 Qg、开关频率相关)计算总热量,确认散热裕量。
  • 对于高频开关场合,适当增加栅极电阻以抑制振铃并配合 RC/TVS 抑制尖峰。

六、选型注意事项

  • 若系统能提供 10 V 栅极驱动,可获得最低 RDS(on);若只能驱动到 4.5 V,应按 33 mΩ 的 RDS(on) 重新评估损耗。
  • 高频应用需权衡 Qg 带来的驱动能耗与开关损耗。
  • 对感性负载务必做好过压保护与回路布局,避免 Crss 引入的 Miller 效应导致误开关。

七、总结

IRFR1205TRPBF-ES 在 60 V/20 A 等级下以较低的导通电阻和适中的栅极电荷,提供了良好的能效与可驱动性,适合多数中低压电源与功率开关场景。根据实际工作电压、开关频率和散热条件进行合理的驱动与 PCB 设计,可发挥其最佳性能。

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