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FUXINSEMI DSR1M
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- FUXINSEMI DSR1M
- Type
- FUXINSEMI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- FUXINSEMI
- Electronic Component
- DSR1M
- Electronic Component
- 1
- Package
- SOD-123
- Electronic Component
- General Purpose Diode
- Electronic Component
- 0.039g
- Electronic Component
- 1
- Electronic Component
- BM0225802225
- Current
- 1A
- Diode
- 1
- Current(Ir)
- 5uA
- (Vf)
- 1.1V@1A
- Electronic Component
- 55℃~+150℃
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
DSR1M — 1kV/1A 整流二极管产品概述
一、产品简介
DSR1M 是富芯森美（FUXINSEMI）推出的一款高反压、小封装表面贴装整流二极管，封装为 SOD-123。该器件针对高压整流与脉冲峰值场合设计，典型工作结温范围为 -55℃ 至 +150℃，适用于狭小空间内的高压整流需求。
二、主要电气特性
- 额定整流电流：1A（连续）
- 直流反向耐压（Vr）：1000V（1kV）
- 正向压降（Vf）：1.1V @ 1A
- 非重复峰值浪涌电流（Ifsm）：25A（单次浪涌）
- 反向电流（Ir）：典型 5µA（在额定 Vr 条件下）
以上参数表明 DSR1M 在高压下依然保持较低漏电及良好的浪涌承受能力，适合高压整流和保护用途。
三、器件亮点
- 高耐压：1kV 反向耐压，适用于开关电源次级、HV 供电轨和离散整流场合。
- 紧凑封装：SOD-123 封装，便于贴片生产和高密度安装。
- 良好浪涌能力：25A 的单次浪涌能力可应对启动、短时冲击电流。
- 低漏电：5µA 级反向电流，利于高阻抗或高精度测量电路的稳定性。
四、典型应用场景
- 开关电源高压整流与续流回路（开关管保护、次级整流）。
- 交流/直流适配器与充电器的高压侧整流。
- 工业仪表、高压传感器供电与保护。
- 脉冲电路、浪涌吸收及钳位电路。
五、设计与使用注意事项
- 热管理：1A 工作时正向功耗约为 P = Vf × I ≈ 1.1W，SOD-123 本身散热有限，建议在 PCB 上采用适当的铜箔散热或将器件布置在散热良好的区域，并参考厂商的结温—电流降额曲线进行设计。
- 浪涌与重复应力：尽管 Ifsm 为 25A，但在高重复脉冲环境或长时间冲击下应采取限流或吸收网络（RC 或 TVS）以延长器件寿命。
- 反向应力与温度：高温时反向电流会增加，关键场合应验证在最高工作温度下的漏电表现。
- 焊接与封装兼容：SOD-123 适用于回流焊工艺，建议遵循标准回流温度曲线并注意湿敏等级和防潮处理。
六、可靠性与质量
DSR1M 针对工业级应用设计，工作结温覆盖 -55℃ 至 +150℃，满足宽温度范围下的稳定性要求。器件通过常规的环境与焊接可靠性试验（如温度循环、湿热、焊接热稳定性）验证。建议在量产前对关键电气参数（Vf、Ir、Ifsm）按工作条件进行样品验证。
结语：DSR1M 在高耐压与小型化之间提供了良好的平衡，适用于需要 1kV 级别反向耐压且空间受限的整流与保护场合。实际设计中请结合 PCB 散热处理与应用环境进行合理的电流与温度降额。若需数据手册或封装尺寸图，可向富芯森美或代理渠道索取完整规格书以获得更详尽的参数和典型特性曲线。
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