WMSIC Electronic Components

FUXINSEMI MBR0530T1G

ModelMBR0530T1G
PackageSOD-123
BrandFUXINSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
FUXINSEMI MBR0530T1G
Type
FUXINSEMI
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
FUXINSEMI
Electronic Component
MBR0530T1G
Electronic Component
1
Package
SOD-123
Electronic Component
Schottky Diode
Electronic Component
0.032g
Electronic Component
1
Electronic Component
BM0226574438
Current
500mA
Diode
Electronic Component
Electronic Component
55℃~+125℃
Electronic Component
Electronic Component
Electronic Component
3000
Voltage Rating(Vr)
30V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

MBR0530T1G 产品概述

一、产品简介

MBR0530T1G 是一款独立式肖特基势垒二极管,品牌为 FUXINSEMI(富芯森美),封装为 SOD-123。该器件专为低压快速整流和保护电路设计,具有低正向压降、快速响应和耐浪涌能力,适用于便携设备、电源管理和保护回路中的整流与反向保护应用。

二、主要电气参数

  • 直流整流电流(IO):500 mA(连续最大工作电流,需考虑散热)
  • 反向耐压(VR):30 V
  • 正向压降(Vf):约 430 mV @ 0.5 A(在典型测试条件下)
  • 非重复峰值浪涌电流(Ifsm):5.5 A(单次脉冲或短时浪涌能力,用于启动或短路条件)
  • 工作结温范围:-55 ℃ 至 +125 ℃

三、封装与热管理

器件采用 SOD-123 小型封装,适合表面贴装工艺(SMT),占板面积小,便于高密度设计。由于该封装热阻相对较高,设计电路板时应:

  • 在焊盘下方和周围增加铜箔面积以提高散热能力;
  • 对连续 0.5 A 工作电流进行温升评估,必要时采取散热措施或降额运行;
  • 注意回流焊工艺参数与封装耐温范围匹配,避免过热损伤。

四、典型应用场景

  • 开关电源(整流/续流二极管)
  • 电源反向保护与OR-ing电路(防止电池/电源反向连接)
  • 电池充放电管理与便携式设备供电路径保护
  • LED 驱动、小功率电源及通信设备的保护与整流
  • 瞬态抑制与夹位电路(结合其他元件使用)

五、使用建议与注意事项

  • 按照最大额定值进行设计:连续电流不超过 500 mA,峰值浪涌电流仅限短时及间隔较长的条件下使用;长期高频浪涌会降低器件寿命。
  • 在高温环境下应采取降额策略,保证结温不超过 +125 ℃。
  • 若需要更高电压或电流能力,应选择额定值更高的型号或并联/更换封装更大的器件,并考虑并联时的电流均流问题。
  • PCB 布局时尽量缩短电流回路长度,增加焊盘和过孔铜量以降低热阻与压降。

六、可靠性与测试

MBR0530T1G 针对一般商用与工业温度范围进行了电气特性测试,包括正向压降、反向漏电、浪涌能力及热循环等项目。实际使用中建议在样机阶段进行如下验证:

  • 温升测试(不同板热设计下的结温测量)
  • 浪涌与短路情形下的可靠性测试(验证 Ifsm 对电路的影响)
  • 负温度系数与长期热应力测试,评估封装与焊点完整性

七、总结

MBR0530T1G(SOD-123)作为一款低压、小体积的肖特基二极管,凭借约 430 mV 的低正向压降和 5.5 A 的短时浪涌能力,适合各类低功耗整流、反向保护及便携电源场景。合理的PCB散热设计与按额定值使用,可充分发挥其在高效能量转换与保护电路中的优势。若需更详细的电气曲线、封装尺寸或回流焊工艺建议,请参考厂方完整数据手册或联系供应商获取样片与技术支持。

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