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FUXINSEMI S9014
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- FUXINSEMI S9014
- Type
- FUXINSEMI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- FUXINSEMI
- Electronic Component
- S9014
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 NPN
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.031g
- Electronic Component
- 1
- Electronic Component
- BM0264480234
- Operating Temperature
- 55℃~+150℃
- Transistor Type
- NPN
- Frequency(f T)
- 150MHz
- Power Dissipation(Pd)
- 200mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
S9014 产品概述
S9014（FUXINSEMI 富芯森美）为一款小功率NPN晶体管，采用SOT-23封装，面向便携式消费电子和通用信号处理场景。基于所给参数，该器件在低电流开关与中低频增益放大应用中表现良好，适用于体积受限电路板的信号放大、驱动及开关任务。
一、主要参数简介
- 晶体管类型：NPN（单只，数量：1个）
- 最大集电极电流 Ic：100mA
- 集射极击穿电压 Vceo：45V
- 耗散功率 Pd（SOT-23）：200mW
- 直流电流增益 hFE：1000（典型）
- 特征频率 fT：150MHz
- 集电极截止电流 Icbo：100nA
- 集射极饱和电压 VCE(sat)：约300mV（在指定条件下）
- 射基极击穿电压 Vebo：5V
- 工作温度范围：-55℃ ~ +150℃
- 封装：SOT-23
二、产品特点
- 高直流电流增益：hFE 达到典型值 1000，便于在低基极驱动条件下实现较大集电极电流放大，适合高灵敏度信号通道。
- 宽电压耐受能力：Vceo 45V 能满足多数中等电压系统的安全裕量。
- 高频性能良好：fT 150MHz 支持较高频段的小信号放大与开关应用。
- 小型封装：SOT-23 体积小，便于高密度PCB布局和表面贴装生产。
三、典型应用
- 低功耗开关与接口驱动（如继电器驱动的前级、晶体管级开关）
- 小信号放大器：前置放大、传感器信号调理、音频前级等
- 驱动小功率LED或光耦输入端
- 高频信号整形与电平转换
四、引脚排列与封装建议
SOT-23 三引脚封装，常见引脚排列为（从封装顶面视角）：1=基极(B)、2=集电极(C)、3=发射极(E)。在实际设计中，请参照厂商封装图与PCB footprint，确保焊盘尺寸与热孔设计以改善散热。
五、使用注意事项与布局建议
- 耗散功率受封装和PCB散热影响显著，200mW为参考值，请在高环境温度下保证足够的热余量。
- Vebo 仅为 5V，应避免基极对发射极施加超过此值的反向电压，防止射极-基极击穿。
- 在高增益（hFE 大）应用时注意基极偏置与温度稳定性，必要时并联偏置电阻或采用温度补偿措施以避免自激或漂移。
- 布局上应尽量缩短基极与输入源间走线，增加旁路电容以抑制高频振荡。
若需器件封装图、典型应用电路或可靠性数据，可提供更详细的资料供设计验证。
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