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FUXINSEMI S9013
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- FUXINSEMI S9013
- Type
- FUXINSEMI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- FUXINSEMI
- Electronic Component
- S9013
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 NPN
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.03g
- Electronic Component
- 1
- Electronic Component
- BM0265133023
- Operating Temperature
- 55℃~+150℃
- Transistor Type
- NPN
- Frequency(f T)
- 150MHz
- Power Dissipation(Pd)
- 300mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
S9013 NPN 三极管（FUXINSEMI）产品概述
一、概述
S9013 是一款由 FUXINSEMI（富芯森美）提供的通用 NPN 双极型晶体管，采用 SOT-23 小封装，适用于空间受限的消费电子与工业控制电路。该器件面向小信号放大与低功耗开关应用，在保持快速响应的同时兼顾较高的直流增益与良好的温度稳定性。
二、主要参数
- 晶体管类型：NPN
- 集电极电流 Ic：最大 500 mA
- 集—射极击穿电压 Vceo：25 V
- 耗散功率 Pd：300 mW（典型环境，参考数据）
- 直流电流增益 hFE：可达 400（特定工作点）
- 特征频率 fT：150 MHz（典型）
- 集电极截止电流 Icbo：100 nA（常温）
- 饱和电压 VCE(sat)：约 600 mV（在规定驱动条件下）
- 射—基极击穿电压 Vebo：5 V
- 工作温度范围：-55 ℃ ～ +150 ℃
- 封装：SOT-23，单只装（数量：1）
三、主要特点与优势
- 直流增益高：高 hFE 使其在小信号放大应用中可以用较小的基极电流获得较大集电极电流，适合前置放大与增益级设计。
- 高频特性良好：fT 达 150 MHz，利于中高频放大与快速开关应用。
- 小封装、低功耗：SOT-23 体积小，便于表贴工艺与密集 PCB 布局，300 mW 的耗散能力适合轻负载工作。
- 宽温度范围：-55 ℃ 至 +150 ℃，适应较为严苛的环境条件。
四、典型应用场景
- 小信号放大器、前置放大级
- 开关驱动、逻辑接口电平转换
- 传感器信号处理、电流/电压检测放大
- 消费电子与便携设备中的低功耗放大与驱动电路
五、封装与可靠性注意事项
SOT-23 封装热阻相对较高，实测耗散能力受环境温度与 PCB 散热设计影响明显。推荐在 PCB 设计中为集电极/散热焊盘留足铜箔面积并考虑散热vias，以提高长期可靠性。器件在高温、高电流工况下应按厂商温度系数进行功率降额使用。
六、使用建议与注意事项
- 严格控制 Vce 不超过 25 V，反向基极-发射极电压不超过 5 V。
- 在饱和开关应用时，应考虑饱和增益下降，适当设计基极电阻以保证可靠导通且不过度驱动基极。
- 注意 Icbo 与漏电流随温度上升可能增加，精密低漏电场合需评估温漂影响。
- 参考具体应用下的测试条件校正 VCE(sat) 与 hFE 数据，必要时在样片上进行实际测量验证。
如需更详尽的电气特性曲线、封装尺寸或可靠性试验报告，可提供后续技术资料或样品测试支持。
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