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FUXINSEMI B5817WS
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- FUXINSEMI B5817WS
- Type
- FUXINSEMI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- FUXINSEMI
- Electronic Component
- B5817WS
- Electronic Component
- 1
- Package
- SOD-323
- Electronic Component
- Schottky Diode
- Electronic Component
- 0.027g
- Electronic Component
- 1
- Electronic Component
- BM0228045246
- Current
- 1A
- Diode
- Electronic Component
- Current(Ir)
- 1mA@20V
- (Vf)
- 450mV@1A
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage Rating(Vr)
- 20V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
B5817WS 产品概述
一、产品简介
B5817WS 为富芯森美（FUXINSEMI）推出的一款独立式肖特基二极管，封装为 SOD-323，面向对导通压降和开关速度有较高要求的低压电源与保护场景。器件在 1A 电流点的正向压降典型值为 450mV，反向耐压为 20V，适合移动设备、功率管理和信号整流等紧凑电路应用。
二、主要特性
- 肖特基结构，开关速度快、无恢复时间损耗；
- 正向压降 Vf = 0.45V @ IF = 1A，导通损耗低；
- 直流整流电流 Io = 1A（需结合封装散热能力评估）；
- 反向耐压 VR = 20V；
- 反向漏电 Ir = 1mA @ VR = 20V（肖特基器件在高温或高压下漏电较为明显）。
三、电气参数要点
- 正向压降：450mV @ 1A（典型），工作中随电流与温度呈略微下降趋势；
- 反向耐压：20V，适合低压保护与二极管 OR-ing 场合；
- 反向漏电：1mA @ 20V，须注意在待机或高温环境下的漏电影响；
- 峰值脉冲能力与结温限制以厂商数据表为准，封装热阻决定持续 1A 导通时的允许功耗。
四、封装与机械安装
SOD-323 为业界常用的小型贴片封装，利于高密度布板与自动贴装。封装上通常可见阴极标识，焊接采用标准回流工艺。由于体积小、热阻较高，建议在 PCB 上配置足够的铜箔散热面积并靠近热源或通过孔以改善散热。
五、典型应用
- 低压电源输出整流与副线整流；
- 电源反向保护与输入 OR-ing；
- DC-DC 升降压变换器的自由轮回或续流二极管（在允许的电压、电流范围内）；
- 电池充放电路径保护、移动设备与便携仪器的电源管理。
六、使用注意与热管理
- 在 1A 工作点，P = Vf × I ≈ 0.45W，SOD-323 封装持续散热能力有限，应进行热仿真或遵循厂家 RθJA 建议并进行适当降额；
- 反向漏电随温度升高显著增大，如用于待机电流敏感场合需评估漏电影响；
- 避免长期在接近 VR 或最大结温下工作；回流焊温度曲线应符合厂家推荐。
七、替代与选型建议
选择替代器件时需同时对比正向压降、反向耐压、漏电以及封装散热性能。若需更高耐压或更低漏电，可考虑更高 Vr 的肖特基或普通整流器；如需更大电流能力，应选用更大封装（如 SMA/SMB）型号。
备注：具体的最大脉冲电流、结温与 RθJA 等关键数据请以富芯森美官方数据手册为准，在设计前建议获取并核对完整参数与封装尺寸图。
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