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FUXINSEMI DSF1J
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- FUXINSEMI DSF1J
- Type
- FUXINSEMI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- FUXINSEMI
- Electronic Component
- DSF1J
- Electronic Component
- 1
- Package
- SOD-123
- Electronic Component
- Fast Recovery / High-Efficiency Diode
- Electronic Component
- 0.036g
- Electronic Component
- 1
- Electronic Component
- BM0264480206
- Current
- 1A
- Diode
- 1
- Current(Ir)
- 5mA
- (Vf)
- 1.7V@1A
- Electronic Component
- 55℃~+150℃
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
DSF1J 产品概述 — 快恢复 / 高效率二极管
一、产品概述
DSF1J 是富芯森美（FUXINSEMI）推出的一款独立式快恢复、高效率整流二极管，封装为 SOD-123。器件额定直流整流电流 1A，直流反向耐压 Vr 为 600V，正向压降 Vf 为 1.7V（在 If = 1A 时），反向恢复时间 Trr ≈ 35ns，反向漏电流 Ir 典型值为 5mA。工作结温范围宽 (-55℃ ~ +150℃)，适合中高压、高频整流场合。
二、主要电气参数与特点
- 直流反向耐压（Vr）：600V，适用于高压整流与保护场景。
- 正向压降（Vf）：1.7V @ 1A，低于传统硅整流器，提高整流效率，降低导通损耗。
- 整流电流：1A DC（独立式单只器件），适合小功率或并联使用提升电流能力。
- 反向恢复时间（Trr）：35ns，属于快恢复类别，适合开关频率较高的电源应用。
- 反向电流（Ir）：约 5mA（典型值，随温度上升明显增加），在高温或高压下需考虑漏电带来的功耗与热量。
- 工作结温：-55℃ 至 +150℃，耐温性能良好，可靠性高。
三、主要应用场景
- 开关电源（SMPS）高压整流与回收电路
- 充电器、适配器高频整流
- 逆变器与电机驱动中的自由轮恢复二极管
- 工业电源、照明驱动、浪涌抑制与反并联保护
- 需要紧凑封装的高压整流或二极管替换场合
四、封装与热管理建议
- 封装：SOD-123，体积小、适合贴片自动化生产，但散热能力有限。
- 布局建议：在 PCB 上为二极管引脚和周边留出较大铜箔散热区，必要时采用多层板或背铜加大散热。
- 使用注意：正向1A、Vf 1.7V 会产生热耗散（Pd ≈ Vf×If），长时间满载或高环境温度时需评估结温，避免超过 Tmax。并联使用时注意电流均流与热失配。
五、选型与可靠性提示
- 若系统工作频率更高或需要更低反向恢复振荡，应考虑更短 Trr 的超快恢复或肖特基器件；若需要更低反向漏电，应注意 Ir 随温升上升的影响。
- 对于高温环境或大电流场合，建议参考完整数据手册中的温度-电流曲线及最大结温限制，必要时采用更大封装或并联多只器件。
- 兼容性：SOD-123 常见替代封装，便于替换与小批量试样。
六、订购信息
型号：DSF1J
品牌：FUXINSEMI（富芯森美）
封装：SOD-123
如需样品、批量采购或获取完整电气特性曲线与可靠性测试报告，请联系供应商或索取官方数据手册以便设计验证。
如需我根据您的具体电源拓扑（开关频率、最大电流、环境温度）给出热设计与器件并联/替代建议，可提供电路参数，我将进一步评估。
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