WMSIC Electronic Components

FUXINSEMI 2SA1013-Y 2SA1013

Model2SA1013-Y
PackageSOT-89
BrandFUXINSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
FUXINSEMI 2SA1013-Y
Type
FUXINSEMI
Minimum package
1000 卷

Technical parameters

Electronic Component
FUXINSEMI
Electronic Component
2SA1013-Y
Electronic Component
1
Package
SOT-89
Electronic Component
1 PNP
Electronic Component
Transistor(BJT)
Electronic Component
0.14g
Electronic Component
1
Electronic Component
BM0257672712
Operating Temperature
55℃~+150℃
Transistor Type
PNP
Frequency(f T)
15MHz
Power Dissipation(Pd)
500mW
Electronic Component
Electronic Component
Electronic Component
1000
Collector Current(Ic)
1A

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

2SA1013-Y 产品概述

一、主要性能

2SA1013-Y 为 FUXINSEMI(富芯森美)推出的一款 PNP 小功率硅双极型晶体管。器件在 SOT-89 封装中提供,主要电气参数如下:集电极电流 Ic 最大 1A,集-射极击穿电压 Vceo = 160V,耗散功率 Pd = 500mW(环境温度依封装及散热条件需降额使用),直流电流增益 hFE 在 Ic=200mA、VCE=5V 时可达 320;特征频率 fT ≈ 15MHz,集电极截止电流 Icbo≈1μA,集电极饱和电压 VCE(sat) 在规定驱动条件下约 1.5V(例如 Ic=500mA、Ib=50mA 时作为参考),射-基极反向击穿 Vebo=6V。工作温度范围为 -55℃ 到 +150℃。

二、典型应用场景

2SA1013-Y 适合用于中低频模拟放大、信号放大器、线性稳压器中的串联元件、高侧开关及一般电源管理电路。凭借 160V 的耐压能力,可用于中高电压场合的开关或放大场景;fT 15MHz 表明其适用于音频到低射频带宽需求。

三、封装与散热考虑

SOT-89 为小型贴片封装,便于 PCB 紧凑布局,但热阻相对较大。器件额定功耗 500mW 在封装限制下对散热依赖明显,建议在 PCB 设计时:

  • 提供宽铜箔散热区域及多层铜通孔;
  • 保持良好空气流动或搭配散热片使用;
  • 根据实际工作点进行功耗降额计算。

四、使用建议与注意事项

  • 必须避免基极-射极反向电压超过 Vebo=6V,以免损伤结结构;基极驱动电路应加入限制。
  • 如从放大区切换到饱和态,需增加基极驱动电流(饱和时常用的强制放大倍数 βsat≈10–20),例如在 Ic=200mA 时,按 hFE=320 可在放大区仅需 Ib≈0.63mA,但若要求饱和导通则需按更低的 β 计算 Ib。
  • 注意 Icbo(漏电)随温度上升会增加,高温下电路偏置需考虑漏电影响。
  • 由于 VCE(sat) 在高电流时仍可能较大(示例 1.5V),在功率敏感应用中需评估功耗与发热。

五、典型偏置示例

在放大区:若设计工作点 Ic=200mA,按 datasheet 给定的 hFE≈320,可使用基极电流 Ib ≈ 200mA / 320 ≈ 0.63mA 来设定偏置;若要求强饱和以降低开关损耗,按强制 β≈10,则需 Ib≈20mA(需确认驱动能力与封装允许的基极电流)。

六、产品选型提示

2SA1013-Y 适合追求高耐压与高增益的 PNP 小功率场合,但因封装与 Pd 限制,适用时应综合考虑工作电流、开关频率与散热措施。选型时建议结合实际电路工况,在 PCB 布局与热管理上做好预留,以保证长期可靠性。若需替代或配对,建议查阅相近参数的 PNP 器件并对比 Vceo、hFE、Pd 与封装热阻等指标。

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