WMSIC Electronic Components

GOODWORK SS8050

ModelSS8050
PackageSOT-23
BrandGOODWORK
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
GOODWORK SS8050
Type
GOODWORK
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
GOODWORK
Electronic Component
SS8050
Electronic Component
1
Package
SOT-23
Electronic Component
1 NPN
Electronic Component
Transistor(BJT)
Electronic Component
0.032g
Electronic Component
1
Electronic Component
BM0230812382
Operating Temperature
55℃~+150℃
Transistor Type
NPN
Frequency(f T)
100MHz
Power Dissipation(Pd)
300mW
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

SS8050 产品概述

一、产品简介

SS8050 为 GOODWORK(固得沃克) 出品的一款小功率 NPN 双极型晶体管,采用 SOT-23 小封装,适合空间受限的便携式和消费类电子产品。该器件在低压、中等电流工作点下具备较高的直流电流增益和良好的高频特性,既可用于信号放大,也常用于低功率开关场合。

二、主要规格

  • 晶体管类型:NPN
  • 集电极电流 Ic:1.5 A(极限值)
  • 集射极击穿电压 Vceo:25 V
  • 耗散功率 Pd:300 mW(SOT-23,需依据实际pcb散热条件降额使用)
  • 直流电流增益 hFE:400 @ Ic=100 mA, Vce=1 V(高增益)
  • 特征频率 fT:100 MHz(适合中高频放大)
  • 集电极截止电流 Icbo:100 nA(低漏电)
  • 集电极饱和电压 VCE(sat):≈500 mV @ Ic=800 mA, Ib=80 mA(开关导通压降参考)
  • 工作结温范围:-55 ℃ ~ +150 ℃(Tj)
  • 射基极击穿电压 Vebo:5 V(需注意基极正向承受限制)
  • 封装:SOT-23

三、性能特点

  • 高直流电流增益:在100 mA工作点时 hFE 可达400,适合做小信号放大器或做低驱动电流的电流放大。
  • 较好的高频响应:fT 约 100 MHz,可用于音频至射频前端的若干放大级(需按增益带宽积设计)。
  • 低漏电流与稳定性:Icbo 仅100 nA,利于低频低功耗电路保持较低静态泄漏。
  • 小体积封装:SOT-23 便于贴片制造和高密度 PCB 布局,但散热能力受限,应注意热设计。

四、典型应用

  • 小信号放大器(音频前级、传感器信号放大)
  • 低压开关(控制小电流负载、驱动继电器/LED 等)
  • 通讯与射频前端的放大级(在合理带宽和增益范围内)
  • 电路保护与接口电平转换

五、封装与引脚

产品为 SOT-23 小三端封装,适合自动化贴装。不同厂家封装引脚定义可能有差异,请务必以 GOODWORK 提供的封装图与数据手册为准以确定 B、C、E 的具体引脚排列和焊盘尺寸。

六、使用与可靠性建议

  • 散热与降额:SOT-23 的 Pd 标称为 300 mW,实际功耗应根据 PCB 铜面积与环境温度进行降额计算,必要时增加散热铜箔或使用热过孔改善散热。
  • 基极限流:因 Vebo 仅 5 V,应在驱动端加入限流/限压措施,避免基极-射极反向过压损坏。
  • 饱和区驱动:若用于开关导通,注意 VCE(sat) 在大电流时可高达约 500 mV,需要评估功耗与发热。
  • 静电与焊接:遵守常规静电防护措施,焊接温度与时间遵循制造商回流焊建议以保证可靠性。
  • 选型注意:在需要更高功率或更低 VCE(sat) 的场合,可考虑更大封装或低饱和电压的替代型号。

如需电气特性曲线、典型应用电路或封装图,请提供具体用途或索取 GOODWORK 的完整数据手册以便详细设计验证。

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