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Gigadevice GD25Q16ESIGR
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- Gigadevice GD25Q16ESIGR
- Type
- GIGADEVICE
- Unit
- Electronic Component
- Minimum package
- 2000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- GIGADEVICE
- Electronic Component
- GD25Q16ESIGR
- Electronic Component
- 1
- Package
- SOP-8-208mil
- Electronic Component
- NOR FLASH
- Electronic Component
- 0.4g
- Electronic Component
- 1
- Electronic Component
- BM0218558642
- Electronic Component
- 16Mbit
- Operating Voltage
- 2.7V~3.6V
- Current
- 11uA
- Interface Type
- SPI
- Electronic Component
- 100000
- Clock Frequency(fc)
- 133MHz
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
GD25Q16ESIGR 产品概述
制造商概览 GD25Q16ESIGR 是由GigaDevice Semiconductor (HK) Limited制造的一款高性能 NOR Flash 存储器。GigaDevice 是一家知名的集成电路设计公司，致力于提供高质量的存储解决方案，广泛应用于消费电子、通讯、工业控制及物联网设备等多个领域。
产品基本信息 GD25Q16是一款为先进应用设计的16兆位（2M x 8）非易失性闪存，采用4线串行外设接口（SPI）通信，能够提供高达133 MHz的时钟频率。这使得它在数据传输速率和系统响应时间上具备优异的性能。GD25Q16的访问时间为7 ns，这对于需要快速读写操作的应用来说至关重要。
电气特性 该产品的工作电压范围为2.7V至3.6V，这为系统设计提供了灵活的电源管理方案。GD25Q16的写周期时间为70µs（字）以及2ms（页），这确保了在频繁的读写操作下，依然能够实现较高的效率。同时，该Flash存储器的工作温度范围为-40°C至85°C，适用于广泛的温度环境，满足工业及汽车应用的需求。
封装与安装 该器件采用了表面贴装型的8-SOIC封装（0.209英寸, 5.30mm宽），体积小巧，便于集成到各类电路板中。它的包装形式为卷带（TR），使得在生产线上的表面贴装过程更加高效，减少了空间的占用并提高了生产效率。GD25Q16的封装尺寸和设计使之适用于空间受限的应用。
应用领域 得益于其出色的性能与灵活的特性，GD25Q16在多个应用场景中表现突出。广泛用于消费电子产品，如智能手机、平板电脑、数码相机等；在通信设备中，如路由器和网络交换机；在工业控制领域中，如传感器和PLC等。它还适用于物联网设备以及智能家居应用中，因其低功耗和快速存取特性，特别适合需要高频次读写的非易失性存储需求。
总结 GD25Q16ESIGR是GigaDevice推出的一款高性能、低功耗的NOR Flash存储器，具备卓越的读写性能、广泛的工作温度范围和灵活的电压需求，充分满足现代电子设备对非易失性存储的需求。凭借其便捷的封装形式和高效的生产方式，GD25Q16在众多应用领域展现出不可或缺的优势，是设计师和工程师在设计存储解决方案时的理想选择。无论是汽车电子、工业控制，还是消费类电子产品，GD25Q16都能够为用户提供稳定可靠的数据存储支持。
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