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Gigadevice GD25Q32ESIGR
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- Gigadevice GD25Q32ESIGR
- Type
- GIGADEVICE
- Unit
- Electronic Component
- Minimum package
- 2000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- GIGADEVICE
- Electronic Component
- GD25Q32ESIGR
- Electronic Component
- 1
- Package
- SOP-8-208mil
- Electronic Component
- NOR FLASH
- Electronic Component
- 0.319g
- Electronic Component
- 1
- Electronic Component
- BM0143875624
- Electronic Component
- 32Mbit
- Operating Voltage
- 2.7V~3.6V
- Current
- 12uA
- Interface Type
- SPI
- Electronic Component
- 100000
- Clock Frequency(fc)
- 133MHz
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
GD25Q32ESIGR 是由 GigaDevice Semiconductor (HK) Limited 生产的一款高性能 NOR FLASH 存储器。这款存储器主要应用于各种需要非易失性存储的电子设备中，具备良好的读取和写入性能，特别适合嵌入式系统、物联网设备、消费者电子产品等应用场景。
基本特性
GD25Q32ESIGR 的存储容量为 32Mb（4M x 8），允许用户有效地存储和提取大量数据。它采用 SPI（串行外设接口） - 四 I/O 接口，支持高速数据传输，最高时钟频率可达 133 MHz。这种设计使得 GD25Q32 能够在需要快速响应时间的应用中表现出色。
在访问时间方面，这款存储器能够提供高达 7 ns 的快速访问性能，非常适合需要低延迟读操作的应用。此外，写入周期时间也相对较短，字写时间为 70µs，页写时间为 2.4ms，确保在进行数据更新时能够保持高效率。
电气特性
GD25Q32 的供电电压范围为 2.7V 到 3.6V，符合现代电子设备对电源的要求。这种宽电压范围不仅支持低功耗运行，也提供了更大的设计灵活性，能够在多种电压环境下稳定工作。
存储器的操作温度范围为 -40°C 到 85°C，显示了其在极端环境下的坚韧性。这样的特性使得 GD25Q32 非常适合工业应用、汽车电子和其他需要高可靠性的领域。
封装与安装
GD25Q32ESIGR 采用了 8-SOIC 封装（0.209"宽，5.30mm），这种表面贴装型封装设计使得元器件在电路板上的安装更加方便，且在紧凑设计中表现优异。8-SOP 封装小巧轻便，非常适合各种空间受限的应用场景。
应用场景
GD25Q32 的应用可以非常广泛，涵盖了从消费类电子产品到工业设备的多个领域。尤其在智能家居、工业自动化、医疗设备和通讯设备中，NOR FLASH 存储器的可靠性和速度使得它成为理想选择。
在智能家居领域，GD25Q32 可以用于存储配置信息、用户设置及日志数据等；而在工业设备中，它可以用来提供固件存储，确保系统在启动时能够快速加载和运行。此外，由于其宽工作温度范围，该存储器在极端环境下也能保持稳定工作。
结论
总体而言，GD25Q32ESIGR 作为一款高性能的 NOR FLASH 存储器，具备优异的读写性能、宽电压范围以及良好的耐温能力，能够满足多种应用需求。其灵活的接口和紧凑的封装设计，使其成为电子产品设计中的重要组成部分。对于寻求高效能和可靠性解决方案的工程师和设计师来说，GD25Q32 是一款值得考虑的理想选择。
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