WMSIC Electronic Components

Gigadevice GD25Q80EEIGR

ModelGD25Q80EEIGR
PackageUSON-8-EP(2x3)
BrandGigadevice
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
Gigadevice GD25Q80EEIGR
Type
GIGADEVICE
Unit
Electronic Component
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
GIGADEVICE
Electronic Component
GD25Q80EEIGR
Electronic Component
1
Package
USON-8-EP(2x3)
Electronic Component
NOR FLASH
Electronic Component
0.066g
Electronic Component
1
Electronic Component
BM0209732829
Electronic Component
8Mbit
Operating Temperature
40℃~+85℃
Operating Voltage
2.7V~3.6V
Current
11uA
Interface Type
SPI
Electronic Component
100000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

GD25Q80EEIGR 产品概述

一、概述

GD25Q80EEIGR 是北京兆易创新(Gigadevice)推出的一款 8Mbit SPI NOR Flash 器件,工作时钟可达 133MHz,工作温度范围为 -40℃ 至 +85℃,适用于工业级和消费级嵌入式存储与代码存放场景。器件封装为 USON-8-EP(2x3),带有裸露散热焊盘,便于热量释放与接地。

二、主要规格

  • 存储容量:8 Mbit(1 MByte)
  • 接口类型:SPI(高频 133MHz)
  • 工作电压:2.7V ~ 3.6V(兼容 3.3V 体系)
  • 工作温度:-40℃ ~ +85℃
  • 页写入时间(Tpp):400 μs(典型)
  • 擦写寿命:100,000 次
  • 数据保存期(TDR):20 年
  • 待机电流:11 μA

三、性能与可靠性

此器件在 133MHz 时钟下可提供较高的读取带宽,适合代码执行型或高速数据读取应用。100k 次擦写和 20 年的数据保持保证了长期可靠性,适合需要频繁固件升级或长期出厂数据保持的场合。低待机电流(11 μA)利于电池供电设备降低静态功耗。

备注示例计算(基于常见 256 字节页大小,若实际页大小不同以数据手册为准):1 MByte / 256 B = 4096 页;全部顺序写入时间约为 4096 × 400 μs ≈ 1.64 s(忽略命令与等待开销)。

四、典型应用

  • MCU 启动/引导存储(Boot ROM / 执行在外部闪存)
  • 固件升级与备份存储
  • 配置参数、校准数据与日志保存
  • 工业控制、网络设备、物联网终端等需长期数据保持与高可靠性的场景

五、设计与布局建议

  • 电源去耦:VCC 附近放置 0.1 μF 陶瓷电容并靠近封装引脚,减少高频抖动。
  • 信号完整性:SCLK 与 MOSI/MISO 走线尽量短且并行匹配,必要时在 SCLK 串联小电阻(10–33 Ω)抑制反射。
  • CS/HOLD/WP 管脚:按系统需要加上上拉/下拉,避免上电时未知状态。
  • 曝露焊盘(EP):焊接到大地平面,有助于散热与可靠焊接;焊盘下建议开地通孔或铺铜。
  • 电平匹配:器件供电 2.7–3.6V,外部 MCU IO 电平需兼容该范围或通过电平移位处理。

总结:GD25Q80EEIGR 以其工业级温度、较高的时钟速率、长期数据保持与高擦写耐久性,适合对可靠性和读取性能有要求的嵌入式存储应用。在系统集成时,请参考完整芯片手册进行命令序列、电源时序与封装焊接注意事项的最终确认。

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