WMSIC Electronic Components

Gigadevice GD25LQ16EEIGR

ModelGD25LQ16EEIGR
PackageUSON-8(2x3)
BrandGigadevice
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Gigadevice GD25LQ16EEIGR
Type
GIGADEVICE
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
GIGADEVICE
Electronic Component
GD25LQ16EEIGR
Electronic Component
1
Package
USON-8(2x3)
Electronic Component
NOR FLASH
Electronic Component
0.065g
Electronic Component
1
Electronic Component
BM0265364692
Electronic Component
16Mbit
Operating Temperature
40℃~+85℃
Operating Voltage
1.65V~2.1V
Current
10uA
Interface Type
SPI
Electronic Component
100000
Clock Frequency(fc)
133MHz

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

GD25LQ16EEIGR NOR FLASH 产品概述

GD25LQ16EEIGR是北京兆易创新推出的一款16Mbit(2MB)容量NOR FLASH存储器,专为低功耗、高速读写及宽温应用场景设计,具备SPI串行接口,可满足嵌入式系统、物联网终端等领域的存储需求。

一、核心规格参数

该产品的核心参数覆盖存储、接口、性能及环境等关键维度,清晰适配多场景需求:

  • 存储容量:16Mbit(换算为2MB),可容纳中等复杂度固件、配置数据及日志;
  • 接口类型:标准SPI串行外设接口,支持多模式时钟配置;
  • 时钟频率:最高133MHz,支持高速数据传输;
  • 工作电压:1.65V~2.1V宽电压范围,适配低电压嵌入式MCU;
  • 待机电流:典型值10uA,低功耗设计显著延长电池续航;
  • 擦写寿命:100000次(10万次),支持频繁数据更新;
  • 数据保留:20年(TDR数据保留时间),断电后长期存储稳定;
  • 工作温度:-40℃~+85℃工业级温度范围,适应极端环境。

二、关键性能优势

  1. 高速读写能力
    133MHz高速SPI接口支持约16MB/s的典型读速度(133Mbps bit率换算),可满足嵌入式系统固件快速加载需求,提升设备启动及响应速度。

  2. 低功耗设计
    待机电流仅10uA,远低于多数同容量NOR FLASH,尤其适合电池供电的物联网终端(如智能手环、传感器节点),有效延长设备续航时间。

  3. 小体积封装适配
    提供SOP8、USON8等小封装形式,节省PCB布局空间,适配紧凑型设备设计(如蓝牙耳机、智能手表)。

  4. 指令集兼容性
    兼容SPI标准指令集,与市场多数同规格NOR FLASH pin-to-pin兼容,便于系统替换升级,降低设计成本。

三、典型应用场景

GD25LQ16EEIGR的性能特点使其适用于以下场景:

  1. 物联网终端设备
    智能手环、智能家居传感器、无线蓝牙模块等低功耗设备,可存储配置参数、传感器日志及固件,满足长期续航需求。

  2. 工业控制模块
    PLC、远程IO模块、工业传感器节点等,宽温范围(-40~85℃)适应户外及工业现场极端温度,10万次擦写寿命支持频繁数据更新。

  3. 消费电子配件
    蓝牙耳机、智能音箱、智能门锁等,存储固件及用户配置(如蓝牙配对信息、音量设置),小封装适配设备小型化需求。

  4. 嵌入式系统固件存储
    低电压MCU(如ARM Cortex-M0+/M3系列)的外部固件存储,16Mbit容量可容纳中等复杂度嵌入式程序,无需复杂内存扩展。

四、可靠性与耐用性

  1. 长擦写寿命
    10万次擦写寿命远超多数同容量NOR FLASH(通常1万次),适合频繁更新数据的场景(如工业日志、物联网固件OTA升级)。

  2. 持久数据保留
    20年数据保留时间确保断电后长期存储的数据(如设备配置、历史日志)不丢失,满足设备长期使用需求。

  3. 抗干扰设计
    符合工业级EMC要求,可适应工业现场复杂电磁环境,避免数据传输错误或存储异常。

五、环境与电压适配性

  1. 宽温度范围
    -40℃~+85℃工业级温度范围,覆盖户外设备(如太阳能传感器)、冷库监控系统等极端温度场景,无需额外散热/保温设计。

  2. 低电压工作
    1.65V~2.1V宽电压范围,直接匹配低电压MCU(如部分ARM Cortex-M低功耗版本),无需电平转换电路,简化系统设计并降低功耗。

综上,GD25LQ16EEIGR以16Mbit容量、133MHz高速SPI、低功耗及宽温适配为核心优势,可广泛应用于物联网、工业控制、消费电子等领域,是嵌入式系统存储方案的可靠选择。

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