WMSIC Electronic Components

HXY MOSFET BAS21S

ModelBAS21S
PackageSOT-23
BrandHXY MOSFET
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 24+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
HXY MOSFET BAS21S
Type
HXY MOSFET
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
HXY MOSFET
Electronic Component
BAS21S
Electronic Component
1
Package
SOT-23
Electronic Component
Switch Diode
Electronic Component
0.046g
Electronic Component
1
Electronic Component
BM0227249386
Current
200mA
Diode
1
Current(Ir)
100nA@200V
(Vf)
1.25V@200mA
Power Dissipation(Pd)
225mW
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BAS21S 产品概述

一、产品简介

BAS21S 是由 HXY MOSFET(华轩阳电子)推出的一款小信号开关二极管,采用 SOT-23 封装,内部为 1 对串联式结构。器件适合在对体积和速度有要求的高压小电流场合作为整流、开关与保护元件使用。其在 200mA 工作电流下具有较低的正向压降和很小的反向漏电,适用于便携设备、通信与工业控制等领域的高压信号处理或保护电路。

二、主要性能参数

  • 二极管配置:1 对串联式
  • 正向压降(Vf):1.25 V @ 200 mA
  • 直流反向耐压(Vr):250 V
  • 额定整流电流:200 mA(DC)
  • 耗散功率(Pd):225 mW
  • 反向电流(Ir):100 nA @ 200 V
  • 反向恢复时间(Trr):50 ns
  • 非重复峰值浪涌电流(Ifsm):2.5 A
  • 封装:SOT-23
  • 品牌:HXY MOSFET(华轩阳电子)

三、特点与优势

  • 高耐压:250 V 的反向耐压使器件能在高压信号路径中直接工作,减少级间隔离元件数量。
  • 低漏电:200 V 时反向电流仅 100 nA,可用于高阻抗或待机功耗敏感电路。
  • 快速开关:50 ns 的反向恢复时间适合中高速开关与脉冲整流应用,能降低开关损耗与电磁干扰。
  • 小体积封装:SOT-23 封装利于空间受限的 PCB 布局与批量自动贴装。
  • 串联结构:1 对串联式设计便于特殊电压分配或阻断方向需求的电路实现。

四、典型应用场景

  • 开关电源次级或辅助电源的小功率整流与箝位。
  • 信号钳位、过压保护与浪涌吸收电路。
  • 通信设备、仪器仪表中的高压小电流检测与保护。
  • 便携与消费电子中用于电平隔离或反向保护的场合。
  • 需要快速恢复且耐压要求较高的脉冲整流应用。

五、使用建议与注意事项

  • 耗散功率 Pd 为 225 mW,实际应用中需注意功耗与结温(尤其在连续 200 mA 工作下),建议在 PCB 设计中配合适量铜箔散热并考虑并联或使用更大封装的方案以降低结温。
  • 在脉冲或浪涌场合,应评估 Ifsm(2.5 A)是否满足瞬态能量要求。长期超过规格的浪涌可能损坏器件。
  • 高频开关时考虑 Trr(50 ns)对系统开关损耗与电磁兼容的影响,必要时配合 RC 缓冲或阻尼网络。
  • 保持反向电压低于 250 V,并留有一定裕量以应对电压尖峰与过渡状态。

六、封装与订购信息

  • 标准封装:SOT-23,方便自动化贴装与体积受限应用。
  • 品牌:HXY MOSFET(华轩阳电子),如需样片或批量采购,请提供完整的器件型号 BAS21S 与包装要求,向华轩阳电子或其授权分销渠道询价与交期。

如需基于具体电路条件(如工作频率、占空比、环境温度)进行热设计或选型对比,我可以根据您的电路参数给出更精确的建议与散热布局方案。

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