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HXY MOSFET BSS123
Configuration
1 options
Configuration
24+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- HXY MOSFET BSS123
- Type
- HXY MOSFET
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- HXY MOSFET
- Electronic Component
- BSS123
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- Electronic Component
- Electronic Component
- 0.033g
- Electronic Component
- 1
- Electronic Component
- BM0227249416
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 350mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BSS123 产品概述
一、概述
BSS123（HXY MOSFET / 华轩阳电子）是一款单个N沟道增强型场效应管，封装为SOT-23，适合低功耗、高耐压的小信号开关和放大场合。器件耐压达100V，漏极持续电流170mA，面向需要高电压隔离但电流要求较小的应用。
二、主要参数
- 类型：N沟道增强型MOSFET
- 漏源电压 Vdss：100V
- 连续漏极电流 Id：170mA
- 导通电阻 RDS(on)：6Ω @ Vgs=10V（测试电流约0.17A）
- 耗散功率 Pd：350mW（Ta=25°C，需按温度降额）
- 阈值电压 Vgs(th)：2.5V（典型）
- 输入电容 Ciss：30pF @ 50V
- 反向传输电容 Crss：7pF @ 50V
- 工作温度范围：-55℃ ~ +150℃
- 封装：SOT-23（引脚常见排列：1=G，2=D，3=S，出货请以封装图为准）
三、特点与优势
- 高耐压（100V）：适合需要高压隔离的小电流开关场合。
- 小输入电容（Ciss≈30pF）：利于快速开关、减小驱动功耗和米勒效应。
- 小体积SOT-23封装：节省PCB面积，适合便携及空间受限设计。
- 宽温度范围：工业级温度规格，可靠性高。
四、典型应用
- 高压逻辑控制与开关（指示灯、小继电器驱动等，电流需求在百毫安级）
- 小功率DC–DC转换器的开关或同步整流（需注意导通损耗）
- 保护与限流电路、信号隔离与电平移位
- 测试与测量仪器中的高压开关元件
五、使用建议
- 导通电阻较高，器件在大电流或高频率切换时会产生显著发热，应严格按Pd和环境温度降额使用，并增大PCB散热面积。
- Vgs(th)=2.5V为阈值电压，不代表完全导通；若需较低RDS(on)应使用接近10V的栅源电压，但实际应用中应综合考虑驱动能力与管脚耐压。
- 对感性负载应并联反向二极管或采用飞轮二极管保护；栅极建议串联小电阻（例如100Ω）抑制振铃并限制瞬态电流。
- 注意静电防护，避免栅极损坏；焊接工艺参考SOT-23规格，回流焊温度曲线不要超出器件说明书。
六、封装与采购
- 封装：SOT-23，便于贴片加工。
- 品牌：HXY MOSFET（华轩阳电子）。
- 选型注意与替代：若需更低RDS(on)或更大电流，建议选取标称导通电阻更低的逻辑级MOSFET；若电压要求可放宽，可考虑市场上更常见的60V级器件以换取更低压降。
如需封装图、引脚功能图或温度-功率降额曲线（Pd随环境温度变化）等详细资料，可提供进一步数据表以便精准设计与布局。
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