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HXY MOSFET MMBTA55
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- HXY MOSFET MMBTA55
- Type
- HXY MOSFET
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- HXY MOSFET
- Electronic Component
- MMBTA55
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 PNP
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.032g
- Electronic Component
- 1
- Electronic Component
- BM0227249435
- Operating Temperature
- 55℃~+150℃
- Transistor Type
- PNP
- Frequency(f T)
- 50MHz
- Power Dissipation(Pd)
- 225mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
MMBTA55 产品概述
一、产品简介
MMBTA55 是一款由 HXY MOSFET（华轩阳电子）提供的高增益 PNP 小信号/功率三极管，采用 SOT-23 封装，针对小体积、高可靠性应用优化设计。器件在中等电流范围内（最高集电极电流 500mA）具有稳定的直流电流增益与较低饱和压降，适用于开关、放大和驱动场合。
二、主要参数
- 晶体管类型：PNP
- 集电极电流 Ic：最大 500mA
- 集-射极击穿电压 Vceo：60V
- 耗散功率 Pd：225mW（封装限制）
- 直流电流增益 hFE：typ. 100（测量条件 Ic=0.5A, VCE=0.25V）
- 特征频率 fT：50MHz（典型值）
- 集电极截止电流 Icbo：100nA（典型）
- 集-射极饱和电压 VCE(sat)：典型 250mV（条件 Ic=100mA, Ib=10mA）
- 射-基极击穿电压 Vebo：4V
- 工作温度范围：-55℃ ～ +150℃
- 封装：SOT-23（小型三引脚封装）
三、主要特性与优势
- 高增益：在中高电流工作点（0.5A）仍能维持约 100 的 hFE，便于减少驱动电流或简化驱动级设计。
- 低饱和压降：在典型 100mA 条件下 VCE(sat) 约 250mV，有利于降低功耗与热耗散。
- 频率响应良好：fT 约 50MHz，适合开关及中频放大应用。
- 宽电压与温度范围：Vceo=60V 与 -55～+150℃ 的工作温度使其适应多种工业环境。
- 小型封装：SOT-23 便于表贴生产与空间受限设计。
四、典型应用
- 低压电源与电源管理（小型功率开关、反相/电平转换）
- 通信设备中小信号放大、缓冲级
- 驱动小型继电器、光耦或指示灯（在规定电流范围内）
- 模拟与混合信号系统中的开关元件与电平移位
五、设计与使用建议
- 热管理：SOT-23 封装 Pd 为 225mW，连续工作时需评估 PCB 散热能力与环境温度，必要时增大铜箔面积或采取周期性工作方式以避免过热。
- 基极反向电压限制：Vebo = 4V，禁止将基极相对于发射极施加过大反向电压，易导致基极-射极击穿。
- 驱动与饱和：若要求最低 VCE(sat)，建议保证适当的基极驱动电流（如 Ic=100mA 时 Ib≈10mA 的比例参考）；避免长时间在极限条件下工作以延长寿命。
- 抗静电与焊接：SOT-23 为敏感元件，生产与贴装时注意 ESD 防护与温度曲线，避免重复加热。
六、可靠性与选型建议
MMBTA55 在中等功率与中频应用中提供良好性价比。选型时应以最大工作电流、功耗与环境温度为主导，若系统存在更高功耗或更严苛散热条件，建议选用更大功率封装或并联方案。渠道采购请认准 HXY MOSFET（华轩阳电子）原厂或授权经销以保证质量与一致性。
如需具体电路参考、SPICE 模型或封装引脚图，可提供进一步资料以便针对应用给出更精确的设计建议。
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