WMSIC Electronic Components

HXY MOSFET S1M

ModelS1M
PackageSOD-123F
BrandHXY MOSFET
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
HXY MOSFET S1M
Type
HXY MOSFET
Minimum package
3000 编带

Technical parameters

Electronic Component
Electronic Component
Electronic Component
HXY MOSFET
Electronic Component
S1M
Electronic Component
1
Package
SOD-123F
Electronic Component
General Purpose Diode
Electronic Component
0.04g
Electronic Component
1
Electronic Component
BM0257484822
Current
1A
Diode
Electronic Component
Current(Ir)
5uA@1kV
(Vf)
1.1V@1A
Electronic Component
55℃~+150℃
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

S1M 产品概述

S1M 为华轩阳电子(HXY MOSFET)推出的一款通用独立式整流二极管,面向高电压、小电流的整流与保护场合。器件在高达1000V的反向电压下仍维持极低的漏电特性,同时具备良好的浪涌承受能力和宽温度工作范围,适合开关电源、高压整流及保护用途。

一、主要参数

  • 二极管配置:独立式(单只封装)
  • 正向压降(Vf):1.1V @ 1A
  • 直流反向耐压(Vr):1000V
  • 额定整流电流:1A
  • 反向电流(Ir):5μA @ 1000V
  • 非重复峰值浪涌电流(Ifsm):30A
  • 工作结温范围:-55°C ~ +150°C
  • 封装:SOD-123F
  • 品牌:HXY MOSFET(华轩阳电子)

二、性能亮点

  • 高耐压:1000V 的反向耐压使其能直接应用于高压整流、飞返回路和高压保护场景。
  • 低正向压降:1.1V @ 1A 的正向压降在同类高压整流器件中表现良好,有助于降低导通损耗。
  • 低反向漏流:5μA @ 1kV 的低反向电流提高了在高压、待机或高阻抗回路中的可靠性与稳定性。
  • 峰值浪涌能力:30A 的非重复峰值浪涌电流可承受开机、短路或突发脉冲能量,但长期或重复冲击需遵循器件浪涌能量限制。

三、典型应用

  • 开关电源(高压整流二极管、次级保护)
  • 高压直流电源与整流模块
  • 电池充电器、能量回收与逆变器保护回路
  • 工业控制设备的反向保护与钳位电路
  • 显示器、照明等含高压驱动电路的整流与保护

四、封装与热管理

SOD-123F 小型封装便于贴片安装并节省PCB空间,但受限于散热面积,1A 连续工作时器件功耗(约等于If×Vf)会导致显著结温上升。建议:

  • 在PCB设计时增加铜箔散热面积或使用热扩散层。
  • 对于长时间大电流或高环境温度场合,进行结温计算并适当降额使用。
  • 参考完整数据手册中的热阻与降额曲线选择合适的封装布局。

五、可靠性与使用建议

  • 在选型与设计时,必须核对浪涌脉冲的具体测试条件(半正弦波宽度等),以确认30A Ifsm 的适用范围。
  • 尽量避免长期在最高结温或最大反向电压下工作,建议留有安全裕度以提升可靠性。
  • 对于关键应用,在样机阶段进行温度、寿命和电气应力测试验证。

六、选购与替代

S1M 适合需要兼顾高压耐受与小体积封装的场合。采购时请确认批次与出厂检验记录,并根据应用决定是否需要更低Vf 或更高Ifsm 的替代件。若需更高浪涌能力或更低正向压降,可咨询供应商获取系列中相近规格的器件型号与datasheet。

总结:S1M(华轩阳电子)是一款面向高压整流与保护应用的通用独立二极管,具有1000V 耐压、1A 整流能力和低漏电特性,适用于多种工业与消费电子产品的高压电路,合理的热设计与合适的使用边界能确保长期稳定工作。

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