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HXY MOSFET BC848B
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- HXY MOSFET BC848B
- Type
- HXY MOSFET
- Minimum package
- 3000 编带
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- HXY MOSFET
- Electronic Component
- BC848B
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 NPN
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.031g
- Electronic Component
- 1
- Electronic Component
- BM0258661708
- Transistor Type
- NPN
- Frequency(f T)
- 100MHz
- Power Dissipation(Pd)
- 200mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Collector Current(Ic)
- 100mA
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BC848B 产品概述
一、基本特性
BC848B 为 NPN 小信号三极管，封装为 SOT-23，适用于低功耗与中等电流应用。器件额定集电极电流 Ic 为 100mA，最大集-射极击穿电压 Vceo 为 30V，耗散功率 Pd 为 200mW。直流电流增益 hFE 在 Ic≈2mA、Vce=5V 时典型值为 200，特征频率 fT 约为 100MHz，适合高频放大与开关应用。
二、电气参数要点
- 类型：NPN
- 最大集电极电流（Ic）：100mA
- 集-射极击穿电压（Vceo）：30V
- 最大耗散功率（Pd）：200mW（SOT-23 封装）
- 直流电流增益（hFE）：约200（在 Ic=2mA、Vce=5V）
- 特征频率（fT）：≈100MHz
- 集电极截止电流（Icbo）：约100nA（静态泄漏小）
- 集电极饱和电压（VCE(sat)）：约500mV（典型条件下）
- 射基极击穿电压（Vebo）：6V
三、主要优势
- 高增益：在小电流工作点具有较高 hFE，便于作为前级放大器或电压放大元件。
- 高频性能良好：100MHz 的 fT 支持 VHF 及一般射频前端的增益要求。
- 低泄漏：Icbo 低，有利于高阻抗电路及低频漂移控制。
- 小体积封装：SOT-23 适合密集 PCB 布局与自动贴装生产。
四、典型应用
- 小信号放大器（音频前级、增益级）
- 高速开关与脉冲电路
- 电平转换与逻辑驱动（驱动小信号继电器或 LED）
- 通信设备的混频或前置放大场合（需关注功率与频率边界）
五、封装与热管理
SOT-23 在 Pd=200mW 条件下热阻相对较高，实际使用时应注意功耗分配与 PCB 散热。建议采用较大铜箔面积、接地铜垫或热过孔来降低结温。连续工作时，尽量避免在最大 Ic 和最大 Vce 同时出现，以免超过耗散限制。
六、使用建议
- 工作电压不要接近或超过 30V 的 Vceo，防止击穿失效；基极-射极电压也不宜超过 6V（Vebo）。
- 若作为开关使用，保证基极驱动电流充足以降低 VCE(sat)，并参考厂方条件调整基极限流电阻。
- 在高频场合注意布局，缩短输入/输出走线，配合退耦电容减少寄生反馈。
七、选购与注意事项
本产品由 HXY MOSFET（华轩阳电子）品牌提供，市场上同名型号可能存在参数差异，选型时请以厂方数据手册为准，确认引脚顺序与测试条件。对于关键应用，建议进行样片测试以验证增益、饱和电压与热稳定性。
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