WMSIC Electronic Components

HXY MOSFET BZT52C6V8

ModelBZT52C6V8
PackageSOD-123
BrandHXY MOSFET
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
HXY MOSFET BZT52C6V8
Type
HXY MOSFET
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
HXY MOSFET
Electronic Component
BZT52C6V8
Electronic Component
1
Package
SOD-123
Electronic Component
Zener Diode
Electronic Component
0.034g
Electronic Component
1
(Zzt)
14.2Ω
Electronic Component
BM0257710772
Diode
1
Current(Ir)
1.6uA@4V
Power Dissipation(Pd)
500mW
Electronic Component
6.46V~7.14V
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BZT52C6V8 产品概述

一、产品简介

BZT52C6V8 是一款独立式稳压二极管(Zener diode),标称稳压值 6.8V,实际稳压范围 6.46V~7.14V,适用于低功耗稳压、基准电压和浪涌钳位等场合。该型号采用 SOD-123 小封装,由 HXY MOSFET(华轩阳电子)生产,体积小、成本低、可靠性高,便于表面贴装(SMT)生产线使用。

二、主要电气参数

  • 标称稳压 Vz(标称值):6.8V
  • 稳压范围:6.46V ~ 7.14V(表示器件批次内电压分布)
  • 反向电流 Ir:1.6 μA @ 4V(反向偏压下的漏电特性)
  • 阻抗 Zzt:14.2 Ω(在规定测试条件下的动态阻抗,反映稳压下电压随电流的变化)
  • 耗散功率 Pd:500 mW(器件在规定散热条件下的最大耗散功率)
  • 封装:SOD-123,极性有阴极带识别

三、特点与优势

  • 小型 SOD-123 封装,适合高密度 SMT 布局。
  • 6.8V 标称电压,±5% 级别的线性稳压性能,适合一般基准和偏置电路。
  • 低反向漏电(μA 级),适用于高阻抗信号和低功耗电路。
  • 中等动态阻抗,能在一定范围内保持良好稳压效果。
  • 500 mW 的耗散能力在合理散热下可满足多数低功率稳压需求。

四、典型应用

  • 低功耗线性稳压:为小型传感器、MCU 外围电路提供参考电压或偏置电压。
  • 过压保护/钳位:作为瞬态电压钳位元件保护敏感电路。
  • 基准源与偏置电路:用于放大器、比较器的参考和偏流网络。
  • 消费电子、仪器仪表、通信设备等需要小体积稳压元件的场合。

五、使用建议与注意事项

  • 最大稳态电流估算:Iz_max ≈ Pd / Vz ≈ 500 mW / 6.8 V ≈ 73.5 mA。该值为理论上限,实际设计应留有裕量并考虑 PCB 散热条件。建议常用工作电流在数 mA 至几十 mA 范围内(典型设计多采用 1–20 mA),以降低结温并延长寿命。
  • 热管理:SOD-123 封装热阻较大,推荐在 PCB 上使用较大铜箔面积和热铜垫来提升散热能力;避免长期在高温/高功耗工况下工作。
  • 布局与焊接:注意极性标识(阴极带);焊盘设计应兼顾可焊性与散热;回流焊温度曲线按制造商推荐控制,避免过热引起性能退化。
  • 漏电与温漂:反向漏电随温度上升而增加,关键应用需评估温度系数并在设计中留出补偿或校准措施。
  • 浪涌与脉冲:连续或高幅值脉冲电流会显著增加结温,应避免超过允许的能量吸收能力。

六、封装与采购信息

  • 型号:BZT52C6V8
  • 封装:SOD-123(表贴)
  • 品牌:HXY MOSFET(华轩阳电子)
  • 应在订购时确认批次、稳压范围与封装要求,并参考厂家完整数据手册以获得详细的测试条件、温度特性与可靠性数据。

总结:BZT52C6V8 在小型化、低功耗稳压和钳位应用中表现良好。合理控制工作电流与改善 PCB 散热是保证其长期稳定运行的关键。请以厂家数据手册为最终依据进行电路设计与可靠性评估。

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