WMSIC Electronic Components

HXY MOSFET 2SC1623

Model2SC1623
PackageSOT-23
BrandHXY MOSFET
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
HXY MOSFET 2SC1623
Type
HXY MOSFET
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
HXY MOSFET
Electronic Component
2SC1623
Electronic Component
1
Package
SOT-23
Electronic Component
1 NPN
Electronic Component
Transistor(BJT)
Electronic Component
0.032g
Electronic Component
1
Electronic Component
BM0227249366
Transistor Type
NPN
Frequency(f T)
250MHz
Power Dissipation(Pd)
200mW
Electronic Component
Electronic Component
Electronic Component
3000
Collector Current(Ic)
100mA

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

2SC1623 产品概述

2SC1623 是由 HXY MOSFET(华轩阳电子)推出的一款通用 NPN 小信号三极管,采用 SOT-23 封装,面向低功耗开关与小信号放大场合。器件在保持极低漏电流与较高增益的同时,兼顾频率响应,适合便携与空间受限的电子产品使用。

一、主要特点

  • NPN 结构,集电极电流 Ic 最大 100mA,满足一般信号开关与驱动需求。
  • 集射极击穿电压 Vceo=50V,适用于中等电压环境。
  • 功耗 Pd=200mW(Ta=25°C 标称),SOT-23 紧凑封装利于高密度电路设计。
  • 直流电流增益 hFE≈200(测试条件:Ic=1mA,Vce=6V),在小电流偏置下具有良好放大能力。
  • 特征频率 fT≈250MHz,可用于 VHF 频段的放大与高速开关场合。
  • 集电极截止电流 Icbo≈100nA,适合高阻抗与低电流漂移要求的电路。
  • 集电极-发射极饱和压 VCE(sat)≈300mV(在适当驱动下),开关损耗较小。

二、典型电气性能(关键指标)

  • 类型:NPN BJT
  • Ic(最大):100mA
  • Vceo(最大):50V
  • Pd(最大,Ta=25°C):200mW
  • hFE:约200 @ Ic=1mA, Vce=6V
  • fT:约250MHz
  • Icbo:约100nA
  • VCE(sat):约300mV

三、典型应用场景

  • 便携设备中的低功耗开关与信号放大。
  • 前置放大器、增益补偿及射频前端的低频至 VHF 级放大。
  • 逻辑驱动、缓冲器、小电流电源控制与电平转换。
  • 仪表与传感器接口电路,利用其低漏电流实现更低的静态误差。

四、封装与热管理建议

2SC1623 使用 SOT-23 封装,布局紧凑便于表贴安装。Pd 为 200mW(Ta=25°C),实际应用时应考虑环境温度与 PCB 散热条件对功耗的降额影响。建议:

  • 在高功耗或连续开关场合增加散热铜箔面积,使用多层 PCB 加强散热通道。
  • 在设计中预留温度裕度,避免接近 Vceo 与最大结温工作点。
  • 对于连续大电流工作,优先选择更大功耗器件或并联/改用散热更好的封装。

五、使用建议与注意事项

  • 在开关用途中,基极串接适当限流电阻以控制基极电流,避免过驱导致损坏。
  • 在射频或高速开关应用,注意走线短且阻抗匹配,减少寄生电容与电感对带宽的影响。
  • 由于 Icbo 低,适用于高阻抗偏置网络,但长时间高温会增加漏电流,应注意工作环境温度控制。
  • 出厂器件需按照 SMD 元器件防潮与回流焊工艺规范处理,避免焊接热损伤。

2SC1623 以其高 hFE、低漏电和良好频率响应,适合在空间受限且注重效率与线性的小信号应用中作为可靠选择。若需批量采购或获取详细封装图与完整参数表,请联系 HXY MOSFET(华轩阳电子)或其授权分销渠道。

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