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HXY MOSFET BAV199
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- HXY MOSFET BAV199
- Type
- HXY MOSFET
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- HXY MOSFET
- Electronic Component
- BAV199
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- Switch Diode
- Electronic Component
- 0.031g
- Electronic Component
- 1
- Electronic Component
- BM0227249402
- Current
- 215mA
- Diode
- 1
- Current(Ir)
- 5nA@75V
- (Vf)
- 1.25V@150mA
- Power Dissipation(Pd)
- 200mW
- Electronic Component
- 55℃~+150℃
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BAV199 产品概述
一、产品简介
BAV199 为一对串联式开关二极管，封装为 SOT-23，由 HXY MOSFET（华轩阳电子）供货。器件设计用于小信号开关、限幅、整流及保护电路，具有低正向压降、很小的反向泄漏和适用宽温度范围的特点，适合便携式与通信类电路中占板面积受限的场合。
二、主要电气参数
- 二极管配置：1 对串联式
- 正向压降：Vf = 1.25 V @ If = 150 mA
- 直流反向耐压：Vr = 70 V
- 直流整流电流：I F(AV) ≈ 215 mA（典型整流等级）
- 耗散功率：Pd = 200 mW（SOT-23 封装）
- 反向电流：Ir = 5 nA @ 75 V（低漏电）
- 反向恢复时间：Trr = 3 µs（中速开关）
- 工作结温范围：-55 ℃ ~ +150 ℃
- 非重复峰值浪涌电流：Ifsm = 1 A
三、性能要点与设计提示
- 正向压降与功耗：在 150 mA 时 Vf≈1.25 V，瞬时功耗约 187.5 mW，已接近封装最大耗散 200 mW，建议避免长时间在此电流下工作，必要时采用并联或更大功率器件。
- 低漏电：Ir≈5 nA 在高压下仍很小，适合要求高输入阻抗或低偏置泄漏的检测与开路保护电路。
- 开关速度：Trr=3 µs 属于中速恢复，适用于音频、低中频率的开关与信号处理；在高频或高 dV/dt 场合可能产生较高开关损耗与电磁干扰，需考虑缓冲或使用快恢复/肖特基器件替代。
- 浪涌能力：Ifsm=1 A 提供短时浪涌耐受，但不得作为长期过载手段。
四、典型应用
- 小信号整流与电平移位
- 二极管开关、信号路由和切换阵列
- 过压/极性保护与钳位电路
- 检波、混频与射频前端（低功率）
- 便携式设备、通信终端与传感器接口
五、封装与布局建议
- SOT-23 封装体积小、焊接兼容性好，适合表面贴装。
- 由于 Pd 限制，PCB 布局应尽量增大铜箔散热面积、使用热过孔并避开热源，以降低结-环境温差并延长器件寿命。
- 高速切换时在二极管两端并联小 RC 阻尼或在源端加限流元件，可抑制振铃与开关峰值。
六、额外说明
在设计前请参照华轩阳电子的完整数据手册获取精确的引脚排列、典型特性曲线及封装尺寸。若系统有更高开关频率、极低正向压降或更大持续电流需求，建议比较肖特基或更高速的开关二极管选型。
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