WMSIC Electronic Components

HXY MOSFET OPA333AIDBVR-HXY

ModelOPA333AIDBVR-HXY
PackageSOT-23-5L
BrandHXY MOSFET
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
HXY MOSFET OPA333AIDBVR-HXY
Type
SOT-23-5L
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
HXY MOSFET
Electronic Component
OPA333AIDBVR-HXY
Electronic Component
1
Package
SOT-23-5L
Electronic Component
Precision Op Amp
Electronic Component
0.035g
Electronic Component
1
Electronic Component
Output
Features
EMI / RF; ESD; Built-in; /; positions
Electronic Component
BM0263488318
Operating Temperature
40℃~+125℃
Amplifier
Electronic Component
Output Current
40mA
(SR)
0.22V/us
Power Supply Voltage
1.8V~5.5V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

OPA333AIDBVR-HXY 产品概述

一、产品简介

OPA333AIDBVR-HXY 是华轩阳电子(HXY MOSFET)推出的一款高精度、低漂移、超低电流的单路运算放大器,封装为 SOT-23-5L。该器件采用零漂移(自动稳零)架构,适用于对直流精度和长期稳定性要求极高的便携式和工业测量系统。器件支持宽电源电压范围和轨到轨输入/输出能力,可在 1.8V 至 5.5V 单电源工作,也支持多种对称双电源配置(如 ±0.9V~±2.75V 范围),非常适合电池供电和低压系统。

二、主要性能指标

  • 单路放大器设计,单电源工作电压:1.8V5.5V;双电源范围:900mV2.75V 或 -2.75V~-900mV
  • 输入失调电压 Vos:典型 3 µV
  • 失调电压温漂 Vos TC:10 nV/℃
  • 增益带宽积(GBW):350 kHz
  • 压摆率(SR):0.22 V/µs
  • 轨到轨输入与轨到轨输出(Rail-to-Rail I/O)
  • 共模抑制比(CMRR):112 dB
  • 输入电压噪声密度 eN:55 nV/√Hz @1 kHz
  • 输入偏置电流 Ib:70 pA;输入失调电流 Ios:100 pA
  • 静态电流 Iq:26 µA(典型)
  • 驱动能力:输出电流可达 40 mA(短时或受限于封装热性能)
  • 工作温度范围:-40 ℃ ~ +125 ℃

三、功能特性

  • 零漂移/自动稳零架构,保证极低的直流误差和长期稳定性,适合高精度测量应用
  • 内置补偿,易于稳定闭环设计,减少外部元件调试工作量
  • 轨到轨输入与输出,可直接测量或驱动接近电源轨的信号,扩展低压系统的输入/输出范围
  • EMI 滤波与 RF 抑制设计,提高在复杂电磁环境下的抗干扰能力
  • ESD 保护与反相位输入保护,提升系统可靠性和抗误操作能力

四、封装与引脚

  • 封装:SOT-23-5L,便于小型化电路板设计和批量生产
  • 典型引脚分配(仅供参考,最终以官方数据手册为准):
    1. OUT(输出)
    2. -IN(反相输入)
    3. +IN(同相输入)
    4. V−(负电源/地)
    5. V+(正电源)

SOT-23-5L 封装在热耗散和输出驱动能力上有一定限制,若需长时间大电流驱动,请注意热设计与器件额定值。

五、典型应用

  • 精密传感器前端(温度、压力、重量传感器等)
  • 数据采集与仪表放大器输入缓冲
  • 电池供电的便携式测量设备与便携仪器
  • 电流检测、差分到单端转换与精密滤波器
  • 医疗诊断设备与低频生物信号放大(注意系统级安全与隔离要求)
  • 需要低漂移、高直流精度与低功耗的工业控制系统

六、设计与使用建议

  • 电源去耦:在靠近器件电源引脚处放置 0.1 µF 陶瓷电容与 1 µF 以上的电容并联,以抑制高频与低频噪声。
  • 布局:将输入信号走线缩短,避免与高频或强电流走线平行,必要时采用屏蔽或接地环路(guard ring)减小漏电与噪声耦合。
  • 输出驱动:虽可短时提供较大输出电流,长期驱动大负载会增加封装温升,需评估热裕量或加装功率缓冲级。
  • 稳定性:器件为内置补偿的通用放大器,但在驱动容性负载或构成高增益闭环时,应通过串联小电阻或补偿网络改善相位裕度。
  • 输入保护:器件具反相位及 ESD 保护,但在恶劣工业环境下建议增加限流电阻或 TVS 等保护器件以提高可靠性。

七、订购信息与合规

  • 型号:OPA333AIDBVR-HXY
  • 品牌:HXY MOSFET(华轩阳电子)
  • 封装:SOT-23-5L
  • 订购和技术资料请参考华轩阳电子官方数据手册与器件规格说明,获取详细引脚图、典型应用电路与完整电气特性曲线。

如需针对特定应用的电路搭建、增益设置或滤波方案建议,可提供系统级参数(供电、信号幅度、带宽、所需精度),便于给出更精确的设计方案。

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