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HXY MOSFET MMBT3906
Configuration
1 options
Configuration
24+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- HXY MOSFET MMBT3906
- Type
- HXY MOSFET
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- HXY MOSFET
- Electronic Component
- MMBT3906
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 PNP
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.03g
- Electronic Component
- 1
- Electronic Component
- BM0227239684
- Transistor Type
- PNP
- Frequency(f T)
- 300MHz
- Power Dissipation(Pd)
- 200mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Collector Current(Ic)
- 200mA
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
MMBT3906 产品概述
一、产品简介
MMBT3906 是一款常用的 PNP 小信号晶体管，适合开关和低功率放大应用。该款由华轩阳电子（HXY MOSFET）提供，采用 SOT-23 表面贴装封装，体积小、便于高速贴装与自动化生产。器件面向一般电子产品、通信与消费类设备的信号处理与驱动场景。
二、主要参数
- 晶体管类型：PNP
- 集电极电流 Ic：200mA（最大）
- 集-射极击穿电压 Vceo：40V
- 最大耗散功率 Pd：200mW（封装相关，应按散热条件降额使用）
- 直流电流增益 hFE：典型 100（在 Ic=10mA，Vce=1V 条件下）
- 特征频率 fT：300MHz（高频性能良好）
- 集电极截止电流 Icbo：典型 100nA
- 饱和电压 VCE(sat)：典型 400mV（具体测试条件请参照数据手册）
- 射基极击穿电压 Vebo：5V
- 封装：SOT-23（常见引脚排列：1=E, 2=B, 3=C，具体以厂商数据手册为准）
三、主要特性与优势
- 高增益：在中小电流工作点具有较高 hFE，便于作为电平转换和小信号放大器件。
- 宽频带：fT≈300MHz，适合高速开关与一定带宽的射频前端或中频级。
- 低漏电：Icbo 值小，有利于低频漂移和低功耗电路的静态性能。
- 小型封装：SOT-23 适合集成化电路板设计与高密度贴装。
四、典型应用
- 小信号放大与前置放大器
- 低功耗开关与驱动（继电器、晶体管阵列等）
- 信号电平移位与缓冲
- 与对应 NPN（如 MMBT3904）配对，构成互补放大级或推挽驱动
- 高频小信号处理（需评估功率与匹配）
五、使用建议与注意事项
- 散热管理：SOT-23 封装的 Pd 受 PCB 面积和铜箔散热影响较大，建议在高功率或连续工作时按热阻降额使用并增加散热铜箔。
- 电压与极限：Vebo=5V，基极对发射极绝对最大电压有限，避免反向过压。Vceo=40V，为安全余量请在设计中留出余量。
- 引脚与封装：不同厂家封装标注可能有差异，使用前请核对厂商数据手册的引脚定义与封装尺寸。
- 静电防护：器件为半导体元件，装配与测试时注意 ESD 防护。
六、封装与采购
该型号以 SOT-23 小封装供应，常见为卷盘包装，适配自动贴片生产。采购时建议索取华轩阳电子（HXY MOSFET）最新版数据手册与器件认证，以确认具体参数、测试条件与可靠性指标。若需替代或并联使用，请评估电流共享与热性能。
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