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HXY MOSFET US1M
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- HXY MOSFET US1M
- Type
- SMA
- Minimum package
- 2000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- HXY MOSFET
- Electronic Component
- US1M
- Electronic Component
- 1
- Package
- SMA
- Electronic Component
- Fast Recovery / High-Efficiency Diode
- Electronic Component
- 0.09g
- Electronic Component
- 1
- Electronic Component
- BM0227249474
- Current
- 1A
- Diode
- 1
- Current(Ir)
- 5uA@1kV
- (Vf)
- 1.7V@1A
- Electronic Component
- 55℃~+150℃
- Electronic Component
- Electronic Component
- Electronic Component
- 2000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
US1M 产品概述
一、产品简介
US1M 为华轩阳电子（HXY MOSFET）推出的独立式快恢复/高效率二极管，采用 SMA 封装，额定整流电流 1A，直流反向耐压高达 1kV。此器件针对高压、开关频率中等的整流与保护场合设计，兼顾开通损耗与反向恢复性能，适用于高压开关电源、功率整流与保护电路。
二、主要参数
- 正向压降 (Vf)：1.7V @ IF = 1A
- 直流反向耐压 (VR)：1000V
- 平均整流电流：1A（限于 SMA 封装的散热能力）
- 反向漏电流 (IR)：5μA @ VR = 1kV
- 反向恢复时间 (Trr)：75ns
- 非重复峰值浪涌电流 (Ifsm)：30A
- 工作结温范围：-55℃ ~ +150℃（Tj）
- 封装：SMA，独立单体二极管
三、性能特点
- 高耐压：1kV 额定满足高压整流与阻断要求，适用于高压电源和阻断保护。
- 低漏电：在满电压下仅 5μA 的反向电流，有利于减小静态功耗与热负载。
- 中快恢复速度：75ns 的 Trr 在多数开关工况下可提供较低的开关损耗与干扰，但在超高频场合仍建议配合吸收网络。
- 封装优势：SMA 小尺寸适合体积受限的电路板设计，便于自动化贴装与量产。
四、典型应用场景
- 高压开关电源（SMPS）高压整流与回收。
- 功率因数校正（PFC）电路的高压整流单元。
- 逆变器与驱动器的钳位/保护二极管。
- 高压电源、充电器、工业电源的整流与保护路径。
五、封装与热管理
SMA 为小型表贴封装，散热受限，实际使用中应在 PCB 上设计足够的铜面（散热铜箔）以降低结温。连续工作电流应参照环境温度与 PCB 散热条件适当降额。对于间歇性大浪涌，Ifsm=30A 能承受短时冲击，但需合理评估脉冲宽度与重复频率。
六、使用与选型建议
- 若需要更低正向压降以降低导通损耗（如在低压大电流场合），可考虑肖特基型号；但肖特基在高压（1kV）时选择有限。
- 在快速开关场合（高 dv/dt 或高频）建议配合 RC 吸收或 TVS 以抑制反射与过冲，降低 EMI 与应力。
- 推荐遵循 J-STD-020/IPC/JEDEC 回流焊工艺规范进行焊接，避免超过封装和基板热极限。
七、采购与可靠性
品牌：HXY MOSFET（华轩阳电子）。作为独立式快恢复二极管，US1M 在高压、需要低漏电与中速反向恢复的场景具有良好性价比。采购时请确认供应商的批次与检验报告，设计中保留适当裕量以保证长期可靠性。
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