WMSIC Electronic Components

HXY MOSFET GS1M

ModelGS1M
PackageSMA
BrandHXY MOSFET
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
HXY MOSFET GS1M
Type
HXY MOSFET
Minimum package
2000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
HXY MOSFET
Electronic Component
GS1M
Electronic Component
1
Package
SMA
Electronic Component
General Purpose Diode
Electronic Component
0.082g
Electronic Component
1
Electronic Component
BM0258661569
Current
1A
Diode
Electronic Component
Current(Ir)
5uA@1000V
(Vf)
1.1V@1A
Electronic Component
65℃~+150℃
Electronic Component
Electronic Component
Electronic Component
2000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

GS1M(HXY MOSFET 华轩阳)产品概述

一、产品简介

GS1M 为华轩阳电子(HXY MOSFET)出品的一款独立式高压整流二极管,采用 SMA 表面贴装封装,面向中低功率高压整流与极性保护场合。器件强调高反向耐压特性和在高压下的低反向漏电表现,适合需要耐压 1kV 且工作电流不大的电源链路与偏置供电。

二、主要参数

  • 二极管配置:独立式(单个管芯)
  • 直流反向耐压 Vr:1000 V
  • 正向整流电流 If(额定):1 A(连续)
  • 反向电流 Ir:5 μA @ 1000 V
  • 非重复峰值浪涌电流 Ifsm:1 A(单次脉冲条件下)
  • 工作结温范围:-69 ℃ ~ +150 ℃
  • 封装:SMA(表面贴装小外形)

三、性能特点

  • 高耐压:1000 V 反向耐压可满足高压偏置、整流、整流桥中要求较高耐压的场合。
  • 低漏电:在最大耐压下反向漏电仅 5 μA,利于高压静态偏置及采样网络,减少泄露带来的误差和能耗。
  • 小型封装:SMA 体积小、占板面积少,适合集成度要求高的电源模块与多通道板卡。
  • 宽温度应用:较宽的结温范围,适用于工业级及部分极端环境下的使用。

四、典型应用场景

  • 高压偏置电源与倒相电源的整流与保护。
  • 功率较小的 HV 供电模块、乳胶、高压电源采样回路。
  • 高压极性保护、浪涌钳位(在浪涌能量低的场合)。
  • 测试/示波电路中高压直流路径的整流或隔离。

五、使用建议与可靠性注意

  • 浪涌能力说明 Ifsm 标称为 1 A,说明器件抗冲击能力有限,若电路可能出现较大浪涌(如直流电源短路或感性负载释放),需外加限流元件或选择更高 Ifsm 的器件。
  • 连续工作电流 1 A 在 SMA 封装下仍需注意结温上升,建议按实际电路测量结温并适当散热或降额运行以提升可靠性。
  • 对于高压静态场合,建议在 PCB 设计中增加爬电距离与绝缘间隙,并注意涂覆或阻燃处理,以防污秽或潮气导致击穿或泄漏。
  • 贮存与回流焊:遵循常规 SMD 器件的潮湿敏感等级(如有)与回流焊温度曲线,避免长时间超过器件热应力限制。

六、封装与焊接注意事项

SMA 为常见的 DO-214AC 类小型表贴封装,焊接时注意回流曲线与焊盘设计以保证热传导均匀;避免长时间处于高回流峰值温度,防止封装应力影响长期可靠性。

七、采购与测试建议

  • 采购时确认出货批次、原厂或代理资质,必要时索取样品进行高压漏电、耐压与温升测试。
  • 量产前建议做 1000 V 耐压测试、250℃/h 热冲击、以及在目标电路中的实际浪涌与长期老化验证。

总结:GS1M 提供了在小体积封装下的 1kV 耐压与低漏电特性,适合对耐压和体积有要求但功率及浪涌不高的高压整流应用。选型时需关注其有限的浪涌能力与散热条件,按实际工况进行降额与保护设计。

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