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Hottech(合科泰) MMBT5551
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Hottech MMBT5551
- Type
- HOTTECH
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- HOTTECH
- Electronic Component
- MMBT5551
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 NPN
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.03g
- Electronic Component
- 1
- Electronic Component
- BM0227281627
- Transistor Type
- NPN
- Frequency(f T)
- 300MHz
- Power Dissipation(Pd)
- 300mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Collector Current(Ic)
- 600mA
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
MMBT5551 产品概述
一、产品简介
MMBT5551 为一款高耐压小信号 NPN 晶体管，来自 Hottech（合科泰），封装为 SOT-23，单片数量：1。其设计侧重高电压、低功耗与中等电流能力的平衡，适用于需要较高集电极-发射极击穿电压但功耗受限的场合。常见用途包括高电压开关、保护电路、VHF 放大与信号整形等。
二、主要电气参数
- 晶体管类型：NPN（双极结晶体管，BJT）
- 集电极电流 Ic（Max）：600 mA（脉冲或短时条件下）
- 集-射极击穿电压 Vceo：160 V
- 耗散功率 Pd（SOT-23 封装）：300 mW
- 直流电流增益 hFE：典型 100 @ Ic=10 mA, Vce=5 V
- 特征频率 fT：300 MHz（适合 VHF 频段放大）
- 集电极截止电流 Icbo：典型 50 nA（低漏电）
- 集射极饱和电压 VCE(sat)：约 200 mV @ Ic=50 mA（对应基极驱动需足够），在较小电流（如 5 mA）亦具有低饱和压降
- 射基极击穿电压 Vebo：6 V
注：数据为典型/典型测试条件，具体应以合科泰正式数据表为准。
三、典型应用场景
- 高电压小信号开关：Vceo=160V 使其可处理高侧或高压脉冲场合（但需注意功耗限制）。
- 保护与钳位电路：配合限流电阻用于输入保护或过压检测。
- VHF 小信号放大器与缓冲：fT=300MHz 适合频率敏感的前端级或本地振荡器缓冲。
- 驱动中小功率负载：在低 VCE 条件下（饱和导通）可驱动继电器小线圈或指示灯等，但连续大电流受 Pd 限制。
四、设计与使用建议
- 热管理：SOT-23 封装 Pd 仅 300 mW，连续大电流（接近 600 mA）时会产生大功耗，建议限制 VCE 或采用脉冲方式工作并留出足够的 PCB 散热面积。
- 饱和驱动：若要求低 VCE(sat)，需保证足够基极电流（按 hFE 在饱和区下降的特性设计）。
- 高压场合：利用其高 Vceo 优势时要注意基极-发射极击穿 Vebo=6V，避免对基极施加过高反向电压。
- 封装与脚位：SOT-23 三引脚，具体引脚定义（B/C/E）请参照合科泰数据手册，避免因脚位差异导致电路错误。
五、封装与采购信息
- 品牌：Hottech（合科泰）
- 封装：SOT-23，适合自动贴片生产工艺
- 数量：单件包装（1 个）或根据供应商提供的卷带/散装规格采购
该器件在追求高耐压且功耗受限的设计中具有良好性价比。选型时请结合实际电路工作点、散热条件及 PCB 布局，并参照官方数据手册进行最终验证。
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