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Hottech IRLML6401
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Hottech IRLML6401
- Type
- HOTTECH
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- HOTTECH
- Electronic Component
- IRLML6401
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 P
- Electronic Component
- MOSFET
- Electronic Component
- 0.03g
- Electronic Component
- 1
- Electronic Component
- BM0227655791
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 1.4W
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 30V
- Capacitor(Ciss)
- 645pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
IRLML6401 产品概述
一、核心简介
IRLML6401 是一款适用于 12V 工况的 P 沟道场效应管（MOSFET），由 Hottech（合科泰）提供，SOT-23 小封装，专为便携与车载等受限空间的高侧开关、反向保护与功率管理场合设计。器件额定漏源耐压为 30V，能够在典型条件下提供约 4A 的连续漏极电流，适合中小功率开关与负载控制。
二、主要参数
- 沟道类型：P 沟道 MOSFET
- 漏源电压 Vdss：30V
- 连续漏极电流 Id：4A（典型应用条件）
- 导通电阻 RDS(on)：52mΩ @ Vgs = 10V, Id = 4A
- 最大耗散功率 Pd：1.4W（SOT-23 封装限制）
- 阈值电压 Vgs(th)：约 1.2V
- 输入电容 Ciss：645pF
- 反向传输电容 Crss：55pF
- 工作温度范围：-55℃ ~ +150℃
- 封装：SOT-23（表面贴装）
三、功能特点
- 低导通电阻：在驱动电压充分（Vgs = 10V）时 RDS(on) 低至 52mΩ，有利于降低导通损耗。
- 紧凑封装：SOT-23 小型化，便于 PCB 布局与高密度组装。
- 适应 12V 系统：30V 的耐压能满足常见 12V 汽车与工业电源的裕度要求。
- 开关性能平衡：中等 Ciss/Crss 值在开关速度与电磁干扰之间取得平衡，适合中频率开关场合。
四、热与功耗注意事项
SOT-23 封装使得最大耗散功率仅为 1.4W，实际工作时需关注热设计：
- 在高电流或高环境温度下，应在 PCB 上增加铜箔散热区或使用过孔加强散热；
- 若持续接近额定电流，建议评估结-到-环境温升，必要时限制占空比或改用大封装器件；
- 开关损耗随频率与电容充放电损耗增加，较高开关频率下需关注 Ciss/Crss 带来的损耗。
五、典型应用与设计建议
适用于：高侧负载开关、短路/反向保护、背光/马达驱动的小功率段、电池管理与便携电子设备。设计时建议：
- 作为高侧开关时注意 P 沟道的 Vgs 极性（相对于源极需为负门限以导通）；
- 若驱动电压不足（低于 ±10V 驱动幅度），需确认 RDS(on) 上升对热和电压降的影响；
- 在快速开关应用中，考虑在栅极加 RC 阻尼或旁路电容以抑制振铃与 EMI。
六、总结
IRLML6401（Hottech 合科泰）在小型封装中提供良好的导通性能与 30V 的耐压裕度，适合 12V 体系下的中小功率开关与保护应用。使用时应结合封装散热能力与工作频率进行热管理与驱动设计，以保证长期可靠性与优良的电性能表现。
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