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Hottech SI2305
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Hottech SI2305
- Type
- HOTTECH
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- HOTTECH
- Electronic Component
- SI2305
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 P
- Electronic Component
- MOSFET
- Electronic Component
- 0.03g
- Electronic Component
- 1
- Electronic Component
- BM0227281560
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 350mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 12V
- Capacitor(Ciss)
- 740pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SI2305 产品概述
一、产品简介
SI2305（品牌：Hottech / 合科泰）是一款小功率P沟道场效应管，采用SOT-23小封装，适用于空间和成本受限的便携设备与电源管理场景。器件额定漏源电压12V、连续漏极电流约4.1A，面向轻载开关、反向保护与低压域功率切换应用。
二、主要特性
- P沟道MOSFET，便于高侧开关设计，省去升压驱动电路。
- 低导通电阻：RDS(on)=45mΩ（VGS=4.5V，于3.5A条件下测得），在允许的电流范围内能提供较低的导通损耗。
- 门极驱动要求适中：总栅极电荷Qg≈15nC（VGS=4.5V），配合驱动器或MCU直接驱动时需考虑驱动能力与开关损耗。
- 小封装与宽温域：SOT-23封装，工作温度范围-55℃至+150℃，适合工业与消费类应用。
三、电气参数概览
- 漏源电压 Vdss：12V
- 连续漏极电流 Id：4.1A（器件标称值，实际可用电流受封装散热与工作温度限制）
- 导通电阻 RDS(on)：45mΩ @ VGS=4.5V（测试电流3.5A）
- 阈值电压 Vgs(th)：约0.9V（测量条件 Id=250µA，按厂家标称）
- 总栅极电荷 Qg：15nC @ 4.5V（影响开关速度与驱动能耗）
- 输入电容 Ciss：740pF，输出电容 Coss：290pF
- 功率耗散 Pd：350mW（SOT-23封装，注意在高环境温度或无散热条件下需降额使用）
四、封装与引脚（注意核对器件资料）
- 封装：SOT-23，适合小型化电路板。
- 常见引脚排列（各厂家封装可能略有差异，请以数据手册为准）：引脚1为栅极（G），引脚2为源极（S），引脚3为漏极（D）。
五、典型应用场景
- 低压直流高侧开关与电源选择（P沟道便于直接与电源相连，简化驱动）
- 便携设备的电池反向保护与功率路径切换
- 低压电源管理、负载开关、低噪声模拟开关场合
- MCU控制的小功率开关与保护电路
六、选型建议与注意事项
- 散热与电流能力：虽然标称Id可到4.1A，但SOT-23封装的Pd仅350mW，长期大电流应用需考虑PCB散热、热阻和降额使用，避免器件过热。
- 驱动与开关损耗：Qg与Ciss指标提示在频繁开关或高频DC-DC应用中会产生明显驱动损耗，需评估驱动器能力与开关频率。
- 门源电压极性：作为P沟道器件，栅极相对于源极需施加合适的负偏压才能导通，设计时注意控制逻辑电平与电源域的关系。
- 数据手册核对：不同生产批次或替代器件在引脚与参数上可能存在差异，建议在设计前查阅最新Datasheet并进行样片测试。
七、结论
SI2305凭借12V耐压、低RDS(on)与小尺寸封装，适合中低功率、高侧开关与电源管理应用。设计时应重点关注封装散热能力、驱动电路匹配及实际工作温度下的电流降额，以确保长期可靠运行。如需在高频或大电流场合使用，建议进行热仿真与实际测量验证。
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