WMSIC Electronic Components

Hottech IRLML2502

ModelIRLML2502
PackageSOT-23
BrandHottech
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Hottech IRLML2502
Type
HOTTECH
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
HOTTECH
Electronic Component
IRLML2502
Electronic Component
1
Package
SOT-23
Electronic Component
1 N
Electronic Component
MOSFET
Electronic Component
0.037g
Electronic Component
1
Electronic Component
BM0228550678
Operating Temperature
40℃~+150℃
Power Dissipation(Pd)
1.25W
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
20V
Capacitor(Ciss)
740pF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

IRLML2502 产品概述

一、产品简介

IRLML2502 是一款由 Hottech(合科泰)提供的逻辑电平 N 沟场效应管,采用 SOT-23 小封装,针对便携式、电源管理与低压开关应用进行了优化。该器件在较低栅极驱动电压下具有较低导通电阻,适合在受限驱动电平和空间受限的电路中作为低侧开关或电源开关使用。

二、主要参数

  • 类型:N 沟道 MOSFET(1 个)
  • 漏源电压 Vdss:20 V
  • 连续漏极电流 Id:4.2 A
  • 导通电阻 RDS(on):50 mΩ @ Vgs=2.5 V(测试电流 3.6 A)
  • 功耗耗散 Pd:1.25 W(SOT-23 封装下的典型器件耗散能力)
  • 阈值电压 Vgs(th):≈0.6 V
  • 总栅极电荷 Qg:8 nC @ Vgs=10 V
  • 输入电容 Ciss:740 pF @ Vgs=10 V
  • 反向传输电容 Crss:66 pF @ Vgs=10 V
  • 工作温度范围:-40 ℃ ~ +150 ℃
  • 封装:SOT-23

三、性能特点

  • 逻辑电平驱动:阈值约 0.6 V,Vgs≈2.5 V 时已能达到 50 mΩ 的低 RDS(on),适合由 MCU 或低压驱动源直接驱动。
  • 低导通损耗:在低压差应用中能有效降低导通损耗,提高效率,适合便携设备与低功率电源路径开关。
  • 小巧封装:SOT-23 体积小、适合集成密度高的电路板布局,但热阻较大,应注意散热设计。
  • 开关性能平衡:Qg=8 nC 与 Ciss/Crss 的组合,在开关速度与驱动功率之间取得平衡;对于高频开关需评估驱动能力与开关损耗。

四、典型应用

  • 低压负载开关与电源选择开关(battery power path switching)
  • MCU 直接驱动的开关电路,电平移位或逆向保护
  • LED 驱动与小功率电源管理
  • DC-DC 变换器的同步或非同步开关(低功率段)
  • 通用开关场景与信号切换

五、使用建议与注意事项

  • 驱动考虑:尽管为逻辑电平器件,若需在高频或较大电流切换场景下工作,应评估 MCU/驱动器可提供的瞬时电流以充放栅极电荷,必要时并联栅极驱动缓冲或采用合适栅极电阻以控制 dv/dt 与振铃。
  • 热设计:SOT-23 封装的 Pd 约为 1.25 W,实际允许的电流受 PCB 铜箔面积与散热条件影响明显。高持续电流或高占空比场合需加大散热铜箔或改用更大封装。
  • 开关损耗:Ciss 与 Crss 在切换过程会贡献能量损耗,Crss 还与回灌和电压振铃相关,必要时在电路中加入缓冲或吸收网络(如 RC 或 TVS)。
  • PCB 布局:尽量缩短漏-源与电感路径,增加散热面积;栅极走线要短且考虑加小电阻以抑制振荡。
  • ESD 与焊接:常规静电防护与符合 SOT-23 焊接温度规范的回流焊工艺即可。

六、封装与可靠性

SOT-23 小封装适合高密度电路设计,但热阻与功耗限制了其在高功率场景的应用。器件工作温度支持 -40 ℃ 至 +150 ℃,满足工业级温度要求。选型时应结合实际工作电压、电流、切换频率与 PCB 散热能力,权衡性能与可靠性。

总结:IRLML2502(Hottech 合科泰)是一款面向低压、低功耗、空间受限场景的逻辑电平 N 沟 MOSFET,具有低 RDS(on) 与适中的开关特性,适用于移动设备电源管理与通用开关应用。

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