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HL 80N06
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- HL 80N06
- Type
- HL
- Minimum package
- 2500 编带
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- HL
- Electronic Component
- 80N06
- Electronic Component
- 1
- Package
- TO-252
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.453g
- Electronic Component
- 1
- Electronic Component
- BM0264092393
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 108W
- Electronic Component
- Electronic Component
- Electronic Component
- 2500
- Voltage(Vdss)
- 60V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
80N06 产品概述
一、概述
80N06 为富海微（HL）推出的高单元密度沟槽式 N 沟道 MOSFET，额定漏源电压 60V、连续漏极电流 80A，兼顾低导通损耗与开关性能，适用于中高电流同步降压和开关电源场景。器件通过全功能可靠性认证，符合 RoHS 及绿色环保要求，并实现 100% EAS（静电敏感性）测试，可靠性适配量产级应用。
二、主要参数
- 类型：N 沟道 MOSFET
- Vdss（漏源耐压）：60V
- Id（连续漏极电流）：80A
- RDS(on)（导通电阻）：5.3 mΩ（典型）
- Pd（耗散功率）：108W
- Vgs(th)（阈值电压）：4V
- Qg（总栅极电荷）：90 nC @ Vgs=10V
- Ciss（输入电容）：4.136 nF
- Crss（反向传输电容）：257 pF
- Coss（输出电容）：286 pF
- 工作温度：-55 ℃ ~ +150 ℃
- 封装：TO-252（DPAK）
- 品牌：HL（富海微）
三、特性与优势
- 低导通阻抗：5.3 mΩ 带来显著导通损耗降低，适合高电流路径使用。
- 适中栅极电荷：Qg=90 nC 在保证低 RDS(on) 的同时兼顾开关损耗，适配常用门极驱动器。
- 优化寄生电容：Ciss/Coss/Crss 比例有助于开关过渡控制与回灌能量管理。
- 工艺与可靠性：沟槽结构与高单元密度工艺提升导通性能；符合 RoHS 与 EAS 测试要求，可靠性优良。
四、典型应用
- 同步降压转换器（buck）功率开关
- 服务器与通信电源模块
- 工业电源与电机驱动前端开关
- 高效率电源管理与分布式电源系统
五、设计注意事项与热管理
- 栅极驱动：建议采用 10~12V 驱动电平以充分开通，注意根据开关速度选择合适门极电阻以控制振铃与 EMI。
- 开关损耗：Qg 和 Coss/Crss 值提示在高频应用需权衡开关频率与效率，必要时考虑软开关或回灌吸收电路。
- 热设计：封装为 TO-252，在实际应用中需通过铜厚与散热铜箔面积优化 PCB 热阻，必要时并联器件或加散热片以满足持续高电流条件下的温升要求。
- 布局建议：漏极与源极走线宽厚，缩短寄生电感；在功率回路及栅极回路处布置充分去耦与阻尼元件以抑制振荡。
六、封装与合规
封装为 TO-252（DPAK），适合表面贴装与自动化生产。器件通过环保合规检测（RoHS），并完成厂商的可靠性与 EAS 抗静电测试，适合工业级量产使用。
综上，80N06 在 60V/80A 级别提供了低 RDS(on) 与可控开关特性，是同步降压与高电流开关电源设计中的优选 MOSFET。应用时关注栅极驱动与散热布局，即可发挥器件最佳性能。
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