WMSIC Electronic Components

Infineon ISC060N10NM6ATMA1

ModelISC060N10NM6ATMA1
PackageTDSON-8FL
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
Infineon ISC060N10NM6ATMA1
Type
TDSON-8FL
Unit
Electronic Component
Minimum package
5000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
ISC060N10NM6ATMA1
Electronic Component
1
Package
TDSON-8FL
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.14g
Electronic Component
1
Electronic Component
BM0228685644
Operating Temperature
55℃~+175℃
Power Dissipation(Pd)
125W
Electronic Component
Electronic Component
Electronic Component
5000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

ISC060N10NM6ATMA1 产品概述

ISC060N10NM6ATMA1 是英飞凌(Infineon)推出的一款高性能 N 沟道功率 MOSFET,额定漏源电压为 100V,面向需要大电流输出、低导通损耗和快速开关特性的功率电子设计。该器件采用 TDSON-8FL 低电感封装,集成了优化的热散能力与低寄生电感,适用于开关电源、逆变、电机驱动及汽车与工业电源管理等场景。

一、主要规格要点

  • 类型:N 沟道 MOSFET(功率型)
  • 漏源电压 Vdss:100 V
  • 连续漏极电流 Id:97 A
  • 导通电阻 RDS(on):6 mΩ @ Vgs = 10 V
  • 最大耗散功率 Pd:125 W(在额定条件下)
  • 阈值电压 Vgs(th):3.3 V @ ID = 50 µA
  • 总栅极电荷 Qg:33 nC @ Vgs = 10 V
  • 输入电容 Ciss:2.5 nF
  • 输出电容 Coss:540 pF
  • 反向传输电容 Crss:15 pF
  • 工作结温范围:-55 ℃ ~ +175 ℃
  • 封装:TDSON-8FL
  • 品牌:Infineon(英飞凌)

二、性能特点与优势

  • 低导通电阻(6 mΩ@10V)带来较小的导通损耗,适合高电流、低压降的负载场景,从而提高系统效率并降低发热。
  • 较高的连续电流能力(97 A)和 125 W 的耗散能力使该器件在中高功率应用中具备良好的负载承载能力(实际应用中需结合散热方案和 PCB 布局进行热设计)。
  • 总栅极电荷 Qg 为 33 nC,配合较小的寄生电容(Ciss 2.5 nF,Crss 15 pF)意味着器件在切换时能实现较快的开关速度,但也对栅极驱动能力提出要求。
  • 宽温区间(-55 ~ +175 ℃)满足严苛环境与汽车级应用的要求(最终是否为 AEC-Q100 等级需以正式数据手册确认)。

三、典型应用场景

  • 同步整流与降压 DC-DC 转换器(高效率电源管理)
  • 电机驱动(中小功率电机控制、电动车辆子系统)
  • 逆变与太阳能微逆、电源逆变模块
  • 汽车电子与工业电源(需注意认证与可靠性验证)
  • 高频开关应用中对低导通损耗与较快开关响应的场合

四、封装与热管理建议

  • TDSON-8FL 封装具有低热阻和低电感特性,但器件的 125 W 标称耗散功率是在理想散热条件下的数值。实际设计中应:
    • 在 PCB 上设计足够大的散热铜箔与多层热通孔(thermal vias),并保证底部焊盘良好接地以利热传导;
    • 考虑加装散热片或强制对流散热以降低结到环境的热阻;
    • 参考器件热阻参数与结温-功率曲线对功率进行热仿真与降额设计。
  • 在高速开关中,合理的回流电容与输入滤波布局可减小寄生电感带来的电压尖峰,保护器件免受过压应力。

五、驱动与开关注意事项

  • 器件在 Vgs = 10 V 时 RDS(on) 性能最佳,建议使用接近 10 V 的栅极驱动电平以获得最低导通损耗;
  • 由于 Vgs(th) = 3.3 V(@50 µA),在仅靠逻辑电平(如 3.3 V)驱动时可能无法达到低 RDS(on),须采用充足栅极门驱动电压;
  • 总栅极电荷 Qg = 33 nC 意味着栅极驱动器需要能提供短时间内较大的电流以保证快速切换,驱动器选择和驱动回路布局需降低驱动延时与振荡风险;
  • Crss 较小(15 pF)有助于减小米勒效应,从而利于快速开关,但在高 dV/dt 条件下仍需注意栅极驱动回路的钳位与阻尼。

六、选型与使用建议

  • 在选型时务必对照完整数据手册,关注脉冲电流能力、SOA、击穿耐受、反向恢复能量(若并联肖特基/二极管)及封装热阻等关键曲线;
  • 若用于并联器件以扩展电流能力,需保证良好的电流均衡与匹配,并在 PCB 布局上尽量减小串联电感差异;
  • 对于汽车或安全关键系统,应确认器件的认证等级与可靠性测试结果(例如 AEC-Q100)。

七、结论

ISC060N10NM6ATMA1 以 100 V 的耐压、极低的导通电阻与较高的连续电流能力,结合低寄生电容和 TDSON-8FL 的良好热特性,适合多类高效能开关电源与功率转换应用。合理的栅极驱动、热设计与 PCB 布局是实现器件性能与高可靠性的关键。最终应用前建议参照英飞凌正式数据手册与典型应用电路进行验证与仿真。

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