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Infineon BSC014N04LSIATMA1
Configuration
1 options
Configuration
Electronic Component
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Infineon BSC014N04LSIATMA1
- Type
- INFINEON
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- INFINEON
- Electronic Component
- BSC014N04LSIATMA1
- Electronic Component
- 1
- Package
- TDSON-8FL
- Electronic Component
- MOSFET
- Electronic Component
- MOSFET
- Electronic Component
- 0g
- Electronic Component
- 1
- FET Type
- N
- Electronic Component
- BM0264771496
- Type
- Surface Mount
- Operating Temperature
- 55°C ~ 150°C（TJ）
- Package / Housing
- 8-PowerTDFN
- Vgs
- ±20V
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：BSC014N04LSIATMA1
BSC014N04LSIATMA1 是由英飞凌（Infineon）推出的一款高性能 N 通道 MOSFET，专为各类快速开关应用而设计。该器件整合了多项先进技术，其关键性能参数使其在现代电子设计中，相较于传统MOSFET产品具备显著的优势，特别是在降低导通电阻和优化开关特性方面。
主要参数与规格
FET 类型：N 通道
技术：MOSFET（金属氧化物场效应晶体管）
漏源电压 (Vdss)：40V
25°C 时的连续漏极电流 (Id)：
- 31A（环境温度下，Ta）
- 100A（冷却温度下，Tc）
驱动电压：
- 最大 Rds On 时的最小栅极电压 (Vgs)：4.5V
- 最大 Rds On 时的最大栅极电压 (Vgs)：10V
导通电阻 (Rds(on))：
- 最大值为 1.45 毫欧，条件为 50A，10V
栅极阈值电压 (Vgs(th))：
- 最大值为 2V，测试条件为 250µA
栅极电荷 (Qg)：
- 最大值为 55nC，条件为 10V
输入电容 (Ciss)：
- 最大值为 4000pF，条件为 20V
功率耗散 (Pd)：
- 最大值为 2.5W（Ta）
- 最大值为 96W（Tc）
工作温度范围：
- 从 -55°C 到 150°C（结温，TJ）
安装类型：表面贴装型
器件封装：PG-TDSON-8 FL
封装/外壳：8-PowerTDFN
性能优势
BSC014N04LSIATMA1 以其极低的导通电阻（R DS(on)）和优良的切换性能，非常适合高效率的电源管理与电机驱动应用。其导通电阻的低值使设备在高负载条件下的功耗显著降低，这对于延长电池寿命及提升系统整体效能尤其重要。同时，器件的快速开关特性为高频率操作提供了强大支持，尤其适用于开关电源、DC-DC 转换器和其他需要快速响应的电路设计。
应用场景
由于其优越的特性，BSC014N04LSIATMA1 适合广泛的应用场景，包括但不限于：
- 开关电源（SMPS）
- DC-DC 转换器
- 电动工具电源管理
- 逆变器及电机驱动
- 通信设备中的电源转换
结论
总的来说，BSC014N04LSIATMA1 是一款强大的 N 通道 MOSFET，凭借其出色的电气性能和高度的可靠性，成为高效能电子设计的重要选择。其低导通电阻、优异的切换性能，以及广泛的应用灵活性，使其在现代电子设备中成为一个理想的解决方案。无论是在要求严格的工业应用还是在消费类电子产品领域，该器件均能为设计工程师提供优质的性能支持。
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