WMSIC Electronic Components

Infineon BSC098N10NS5

ModelBSC098N10NS5
PackageTDSON-8(5x6)
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
Infineon BSC098N10NS5
Type
INFINEON
Unit
Electronic Component
Minimum package
5000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
BSC098N10NS5
Electronic Component
1
Package
TDSON-8(5x6)
Electronic Component
1 N
Electronic Component
MOSFET
Electronic Component
0.226g
Electronic Component
1
Electronic Component
BM0178585338
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
69W
Electronic Component
Electronic Component
Electronic Component
5000
Voltage(Vdss)
100V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BSC098N10NS5 产品概述

产品简介

BSC098N10NS5 是一款由英飞凌(Infineon)生产的高性能 N 沟道场效应管(MOSFET)。该器件具有2.5W的功耗能力,最高可承受100V的电压和60A的电流,适用于各种功率管理和转换应用。其封装类型为 PG-TDSON-8,尺寸为5x6mm,这种紧凑的封装设计使其在高密度电路板上具有很好的适应能力。

关键特性

  1. 高电流和电压承受能力:BSC098N10NS5 具备承受最高100V的电压和60A的电流能力,能够满足大多数高功率应用的需求,尤其适合用于电源管理、电机驱动以及充电站等场合。

  2. 低导通阻抗:该 MOSFET 设计具有较低的导通电阻(RDS(on)),有助于降低导通损耗,提高整体效率,特别在高频率的开关工作环境中表现出色。

  3. 优秀的热管理:封装设计优化了散热性能,使得器件在工作时能有效地散热,从而延长了使用寿命并减少了故障的可能性。

  4. 快速开关特性:具有较快的开关速度,适用于高效的开关电源和其他要求快速开关的应用场景,同时减少了开关损耗。

  5. 低输入电容:较低的输入电容使得驱动电路设计更加简便,提高了系统的响应速度。

应用领域

BSC098N10NS5 在多个应用场合中表现出色,主要包括:

  • 电源管理:用于 DC-DC 转换器、开关电源和适配器,能够有效地提高转换效率。
  • 电动机驱动:可应用于电动车、工业机械和家用电器中的电机控制,确保高效的性能和可靠性。
  • 电池管理系统:在电池充放电过程中进行高效控制,适用于电动车充电站和小型储能系统。
  • 消费电子:在各种消费电子产品中实现高效的电力分配和管理。

设计注意事项

在使用 BSC098N10NS5 时,设计工程师需要考虑以下几点:

  • 散热设计:虽然器件本身具备良好的热管理能力,但在高功率负载应用中,合理的散热设计依然至关重要,确保器件工作在安全的温度范围内。
  • 驱动电路:由于输入电容低,需要设计适当的驱动电路,以确保 MOSFET 的快速响应和切换。
  • 电磁干扰(EMI):在高速开关情况下,可能会导致一定的电磁干扰,需通过适当的滤波和屏蔽设计进行抑制。

结论

BSC098N10NS5 是一款高效能、高可靠性的 N 沟道 MOSFET,凭借其出色的电气特性和紧凑的封装,广泛应用于电源管理、电机驱动和其他相关领域。如果您在寻找一款能够提供高功率和高效性能的场效应管,该器件无疑是一个理想的选择。英飞凌作为全球领先的半导体制造商,凭借严谨的设计和卓越的制造工艺,确保了 BSC098N10NS5 在实际应用中的表现达到了行业的高标准。

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