WMSIC Electronic Components

Infineon BSS816NWH6327XTSA1

Infineon BSS816NWH6327XTSA1
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Product image

ModelBSS816NWH6327XTSA1
PackageSOT-323-3
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

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Technical data

Product details

20 specifications

Core information

Product name
Infineon BSS816NWH6327XTSA1
Type
INFINEON
Unit
Electronic Component
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
BSS816NWH6327XTSA1
Electronic Component
1
Package
SOT-323-3
Electronic Component
MOSFET
Type
N
Electronic Component
0.072g
Electronic Component
1
FET Type
N
Electronic Component
BM0000280746
Type
Surface Mount
Operating Temperature
55°C ~ 150°C（TJ）
Package / Housing
SC-70，SOT-323
Vgs
±8V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

产品概述：BSS816NWH6327XTSA1

一、产品简介 BSS816NWH6327XTSA1是一款高性能的N沟道MOSFET，由著名半导体公司Infineon（英飞凌）生产，广泛应用于电子电路中，尤其是在需要高效电源管理和开关控制的场景下。该器件以其卓越的性能特征、紧凑的封装和良好的热管理能力，成为设计工程师的理想选择。

二、主要参数 BSS816NWH6327XTSA1具有以下关键技术参数：

  • 漏源电压（Vdss）：20V，能够有效承受较高的电压压力，适合多种应用环境。
  • 连续漏极电流（Id）：1.4A（在25°C环境下），为负载提供可靠的电流传输。
  • 栅源极阈值电压（Vgs(th)）：750mV @ 3.7μA，确保MOSFET在低电压下也能正常工作，适合低电平信号控制。
  • 漏源导通电阻（Rds(on)）：160mΩ @ 1.4A, 2.5V，这一低导通电阻特性在开关过程中可显著减小功耗并提高效率。
  • 最大功率耗散（Pd）：500mW @ Ta=25°C，确保在各种条件下长期工作而不会过热。
  • 工作温度范围：-55°C ~ 150°C，保证其在极端恶劣的环境下工作稳定。

三、封装与安装 BSS816NWH6327XTSA1采用SC-70/SOT-323封装，表面贴装设计（SMD），不仅可节省电路板空间，还简化了自动化焊接工艺。这种小型化的封装适合便携式和移动设备，如智能手机、平板电脑等。

四、典型应用 BSS816NWH6327XTSA1的特性使其在多个领域都有广泛的应用，包括：

  • 开关电源：由于其高效的导通特性，适合用于DC-DC转换器。
  • 电机驱动：作为电机控制电路中的开关元件，能有效调节电机速度。
  • 逻辑级开关：在数字电路中可用于信号的开关控制。
  • 负载开关：在家电和工业设备中作为负载开关使用。
  • 电池管理系统：由于其低导通电阻特性，适合用于电池的充电和放电控制。

五、设计考虑 在设计使用BSS816NWH6327XTSA1时，工程师需要关注其最大功率耗散及环境散热条件，以避免过热损坏。此外，由于Vgs最大值为±8V，栅极电压的管理至关重要，设计时需要确保Vgs的范围不超过该参数，以避免损坏MOSFET。

六、结论 BSS816NWH6327XTSA1是一款性能优异的N沟道MOSFET，凭借其高可靠性、出色的电气特性和小型封装，成为现代电子设计和功率管理领域的重要选择。无论是用于普通家电，还是在高端智能设备中，BSS816NWH6327XTSA1都能为设计提供极大的灵活性和效率，是各种工程项目中的理想组成部分。选择BSS816NWH6327XTSA1，将使您的设计更具竞争力和市场适应能力。

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