WMSIC Electronic Components

Infineon BSS308PEH6327XTSA1

ModelBSS308PEH6327XTSA1
PackageSOT-23
BrandInfineon
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
Infineon BSS308PEH6327XTSA1
Type
INFINEON
Unit
Electronic Component
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
INFINEON
Electronic Component
BSS308PEH6327XTSA1
Electronic Component
1
Package
SOT-23
Electronic Component
MOSFET
Electronic Component
MOSFET
Electronic Component
0.061g
Electronic Component
1
FET Type
P
Electronic Component
BM0000281597
Type
Surface Mount
Operating Temperature
55°C ~ 150°C(TJ)
Vgs
±20V
Electronic Component
Electronic Component

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BSS308PEH6327XTSA1 产品概述

产品简介

BSS308PEH6327XTSA1 是一款由英飞凌(Infineon)生产的高性能 P沟道 MOSFET,采用表面贴装型 (SMD) 封装,符合 PG-SOT23-3 尺寸标准。这款场效应管的主要特点是其低导通电阻和宽工作温度范围,使其成为电源管理和负载开关应用中的理想选择。

技术特性

  • 导通电阻: 在 Vgs 为 10V 和 Id 为 2A 的条件下,BSS308PEH6327XTSA1 的最大导通电阻为 80 毫欧。这一特性使其在低功耗应用中表现优越,有助于提高能效和降低功耗。

  • 工作电流和电压: 产品支持连续漏极电流 (Id) 达到 2A,漏源电压 (Vdss) 不超过 30V,满足大多数中低功率应用的需求。

  • 栅极驱动电压: 对于实现最小导通电阻,产品可在 4.5V 至 10V 的栅极电压范围内工作。这一特性确保了其在多种电源电压环境下的兼容性,便于系统设计。

  • 栅极电荷: 最大栅极电荷 (Qg) 为 5nC,这意味着 MOSFET 在开关过程中的驱动损耗较低,适合需要快速切换的应用场合。

  • 输入电容: 在 15V 的漏源电压 (Vds) 下,输入电容 (Ciss) 的最大值为 500pF。这使得 BSS308PEH6327XTSA1 在信号处理和开关控制中具有快速响应特性。

  • 漏极阈值电压 (Vgs(th)): 在 11µA 的漏电流条件下,Vgs(th) 最大值为 2V,这一特性使开发人员能够精确控制 MOSFET 的开启与关闭状态,适应多种电路设计需求。

工作环境

BSS308PEH6327XTSA1 的工作温度范围为 -55°C 到 150°C,确保在极端环境下也能稳定运行。无论是在严酷的工业环境中还是在高温操作条件下,此 MOSFET 的高温稳定性使其能够可靠地工作,符合高性能电子设备的需求。

应用领域

由于其优异的电气特性和宽广的适用温度范围,BSS308PEH6327XTSA1 被广泛应用于各种领域,包括但不限于:

  • 电源开关: 可用于电源管理模块中,控制电流的开关和电源的调整。

  • 负载开关: 在需要控制较大负载的场合,如电机驱动和LED照明等,BSS308PEH6327XTSA1 提供高效的开关解决方案。

  • 信号切换: 稳定的栅压和快速的开关特性使其非常适合于信号切换和分配应用。

  • 电子负载控制: 在需要控制电流流向或电流特性的应用中,该产品表现出色。

封装和安装

该产品采用 PG-SOT23-3 封装,尺寸小巧,适合高密度电路板设计。同时,采用表面贴装安装方式,便于自动化生产和组装,提高产品的一致性和生产效率。

总结

BSS308PEH6327XTSA1 是集高性能、可靠性和多功能性于一体的 P沟道 MOSFET。其显著的电气特性以及广泛的应用适用性,使得该产品在现代电子设计中具有极大的价值。无论是在一般消费电子、工业设备,还是在高端电源管理系统中,这款 MOSFET 都能够提供优异的性能,满足日益增长的各类电气应用需求。

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