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Infineon IPL60R650P6S
Configuration
1 options
Configuration
24+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Infineon IPL60R650P6S
- Type
- THINPAK(5X6)
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- INFINEON
- Electronic Component
- IPL60R650P6S
- Electronic Component
- 1
- Package
- ThinPAK(5x6)
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 0.129g
- Electronic Component
- 1
- Electronic Component
- BM0211384336
- Operating Temperature
- 40℃~+150℃
- Power Dissipation(Pd)
- 56.8W
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
- Voltage(Vdss)
- 600V
- Capacitor(Ciss)
- 557pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
IPL60R650P6S 产品概述
一、简介
Infineon IPL60R650P6S 是一款高压 N 沟道功率 MOSFET，额定漏源电压 600V，面向高压开关应用设计。器件在 VGS=10V 时导通电阻 RDS(on)=650mΩ，栅极总电荷 Qg=12nC，输出电容 Coss=28pF，输入电容 Ciss=557pF，阈值电压 Vgs(th)=4.5V（ID=0.2mA）。封装为 ThinPAK（5×6），适合表面贴装与自动化组装。
二、主要参数与性能亮点
- Vdss：600V，适合高压侧开关与隔离式电源初级；
- RDS(on)：650mΩ（@VGS=10V），适用于高压低至中等电流场合；
- 连续漏极电流 Id：6.7A，功耗 Pd：56.8W（注意热环境与散热条件）；
- 栅极电荷 Qg：12nC（@10V），门极驱动负担中等，利于较快开关；
- 寄生电容：Ciss=557pF、Coss=28pF，对开关损耗与复位行为有直接影响。
三、封装与热管理
ThinPAK（5×6）提供紧凑尺寸与较低寄生电感，便于高频开关布局。尽管标称耗散功率较高，实际使用中需关注焊盘热阻和散热路径设计：尽量在 PCB 背面或底层配置铜厚、热过孔与散热铺铜，确保结壳温度在安全范围内。布局时减少回路面积与寄生电感，有助于降低电压尖峰和 EMI。
四、典型应用
- 开关电源（尤其反激与半桥初级）；
- 功率因数校正（PFC）初级高压开关；
- 高压 LED 驱动与工业电源；
- 需要高压耐受但工作电流不大的应用场景。
五、驱动与设计建议
- 建议门极驱动电压 10V 以获得标称 RDS(on)；阈值较高，不能仅用逻辑电平直接驱动；
- 选配合适的门极电阻以控制开关速度，降低振铃与过冲；必要时并联阻尼或 RC 吸收；
- 关注 Coss 与电流波形的相互作用，开关损耗随频率上升而增加，需评估效率与热耗散；
- 在高 dv/dt 场合注意栅极电容耦合，避免误触发或需增加栅源箝位。
六、可靠性与注意事项
- 器件适合高压应用但 RDS(on) 相对偏大，应避免长期在高电流下工作以免过热；
- 实际功耗计算应包含导通损耗 (I^2·RDS) 与开关损耗（与 Qg、Coss、开关频率相关）；
- 推荐在原型阶段做热成像与开启/关断过渡测试，验证 PCB 散热与器件结温。
七、总结
IPL60R650P6S 是一款面向高压、低至中等电流的工业级 MOSFET，ThinPAK 封装带来较低寄生与良好组装性。凭借 600V 耐压与中等 Qg，该器件在反激式电源、PFC 初级开关及高压驱动场景中具有实用性。设计时应重点考虑门极驱动、电压尖峰抑制和热管理，以保证稳定可靠运行。
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