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Jingdao Microelectronics BZT52C4V7SW
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Electronic BZT52C4V7SW
- Type
- Jingdao Microelectronics
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic
- Electronic Component
- BZT52C4V7SW
- Electronic Component
- 1
- Package
- SOD-323W
- Electronic Component
- Zener Diode
- Electronic Component
- 0.027g
- Electronic Component
- 50
- (Zzk)
- 500Ω
- (Zzt)
- 80Ω
- Electronic Component
- BM0237586317
- Diode
- 1
- Current(Ir)
- 3uA@2V
- Power Dissipation(Pd)
- 200mW
- Electronic Component
- 4.4V~5V
- Electronic Component
- 55℃~+150℃
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BZT52C4V7SW 产品概述
一、产品简介
BZT52C4V7SW 是晶导微电子推出的一款独立式稳压二极管，标称稳压值 4.7V（允许范围 4.4V～5.0V），适用于小功率电源稳压、基准电压和浪涌/过压钳位。器件采用 SOD-323W 微小封装，体积小、适合高密度贴片电路。
二、主要电气参数
- 稳压值（标称）：4.7V；允许范围：4.4V～5.0V
- 反向漏电流 Ir：3 μA @ 2V
- 最大耗散功率 Pd：200 mW（无外部散热条件下）
- 阻抗 Zzt：80 Ω；阻抗 Zzk：500 Ω
- 工作结温范围：-55 ℃ ～ +150 ℃
三、特性与优势
- 精准稳压：4.7V 标称值，适合 5V 近似要求的低功耗电路。
- 低漏电流：在低压偏置下泄漏仅数微安，利于电池供电与低功耗设备。
- 封装紧凑：SOD-323W 适合空间受限的消费电子与便携设备。
- 容易贴片与自动化装配，成本低且可靠性高。
四、典型应用场景
- 小信号参考源与局部稳压（如传感器、模拟前端）
- 电源浪涌与过压保护、输入钳位
- 电池管理与便携式设备的电压限制
- 接口电路的保护和简单电压监控
五、封装与热管理
SOD-323W 封装热阻较大，器件 200 mW 的耗散能力受 PCB 版面和环境温度影响明显。实际使用时应按下列方式控制结温：
- 使用足够的铜箔散热面，增加焊盘面积；
- 在可能处加入散热过孔或铜箔层；
- 在设计时按 Pd 计算最大允许电流 Iz_max ≈ Pd / Vz（以 4.7V 计约 42.6 mA），并考虑散热余量和温升，实际工作电流应低于该理论值。
六、选型与使用建议
- 串联限流电阻计算公式：R = (Vin - Vz) / Iz；电阻耗散 P_R = (Vin - Vz) × Iz。
- 为延长器件寿命和保证稳定性，建议在常温条件下将稳压电流控制在几毫安到十几毫安范围，避免长期接近最大耗散功率。
- 在高温或高散热受限的设计中，请按热阻和环境温度进行额外的功率降额。
七、质量与供应
晶导微电子生产，器件适配自动化贴片工艺，并提供批量供应。选购时请确认规格表中的测试条件与包装形式以满足具体设计需求。若需更高功率或更低阻抗规格，可考虑封装更大或参数更优的系列元件。
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