Model & package intelligence
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Jingdao Microelectronics ES2DB
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Electronic ES2DB
- Type
- Jingdao Microelectronics
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic
- Electronic Component
- ES2DB
- Electronic Component
- 1
- Package
- SMB
- Electronic Component
- Fast Recovery / High-Efficiency Diode
- Electronic Component
- 0.205g
- Electronic Component
- 1
- Electronic Component
- BM0227664049
- Current
- 2A
- Diode
- 1
- Current(Ir)
- 5uA@200V
- (Vf)
- 1V@2A
- Electronic Component
- 55℃~+150℃
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
ES2DB 产品概述
一、产品简介
ES2DB 为晶导微电子推出的一款独立式快恢复/高效率整流二极管，封装为 SMB（DO-214AA）。器件适用于开关电源、逆变器、马达驱动等需要快速恢复与低正向压降的场合，兼顾高浪涌能力与宽工作结温范围，便于在中小功率电源系统中替代普通整流二极管以提高效率。
二、主要技术参数
- 型号：ES2DB（晶导微电子）
- 封装：SMB（独立式）
- 直流整流电流：2 A
- 正向压降：Vf = 1.0 V @ If = 2 A
- 非重复峰值浪涌电流：Ifsm = 60 A
- 直流反向耐压：Vr = 200 V
- 反向电流：Ir = 5 µA @ VR = 200 V
- 反向恢复时间：Trr = 35 ns
- 工作结温范围：Tj = -55℃ ~ +150℃
三、特点与优势
- 快恢复特性（Trr≈35 ns），减少开关损耗与电磁干扰。
- 低正向压降（1 V @ 2 A），降低导通损耗，提高转换效率。
- 高峰值浪涌能力（60 A），增强启动或短时过载耐受性。
- 低反向漏电（5 µA @ 200 V），适合高压整流场合。
- 宽温度范围，适应恶劣环境与高温工作条件。
四、典型应用
- 开关电源（SMPS）整流/续流二极管
- 逆变器与电机驱动的自由轮二极管
- LED 驱动与充电器输出整流
- 保护回路、过压吸收与功率模块的快恢复整流
五、封装与热管理
SMB 封装便于焊接与散热，但在持续 2 A 电流下仍需注意热阻与PCB散热布局。推荐采用较大铜箔面积、加热沉或散热岛，并参考厂方结壳/结板热阻与容许结温随电流的降额曲线进行设计，以保证长期可靠性。
六、使用与注意事项
- 禁止超过 Vr = 200 V 的反向应力，避免长期高温下漏电增加。
- 在高 dv/dt 或高频开关应用中，注意布局缩短回流路径以减少寄生电感引起的过压。
- 对于频繁开关与硬恢复场景，可评估是否需要额外缓冲（RC 抑制或TVS）以降低应力。
- 焊接时遵循 SMB 封装的回流曲线，避免超温造成器件损伤。防静电操作、避免机械应力。
七、订购信息与质量
- 品牌：晶导微电子
- 型号：ES2DB，封装 SMB
- 建议向授权分销商或厂方索取完整数据手册（包含温升、降额曲线、机械尺寸与可靠性试验报告）以便设计验证与采购。
以上为 ES2DB 的产品概述与应用建议，具体性能与电气特性请以晶导微电子正式数据手册为准。
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