WMSIC Electronic Components

Jingdao Microelectronics SMCJ5.0CA

ModelSMCJ5.0CA
PackageSMC(DO-214AB)
BrandElectronic
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Electronic SMCJ5.0CA
Type
Jingdao Microelectronics
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic
Electronic Component
SMCJ5.0CA
Electronic Component
1
Package
SMC(DO-214AB)
Electronic Component
Electronic Component
Electronic Component
ESD and Surge Protection (TVS / ESD)
Electronic Component
0.375g
Electronic Component
1
Channel Count
Electronic Component
Electronic Component
BM0257437557
Operating Temperature
55℃~+150℃
Voltage
9.2V
Current(Ir)
800uA
Voltage(VBR)
7V
Electronic Component
Electronic Component

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

SMCJ5.0CA(SMC 封装)产品概述

一、产品简介

SMCJ5.0CA 是晶导微电子推出的一款单路瞬态电压抑制器(TVS 二极管),封装为 SMC(DO-214AB),用于抑制浪涌、雷击和开关瞬变等过压事件,保护5V工作电源和信号线。器件具有快速响应、高能量吸收能力和宽工作温度范围,适用于工业、通信、消费电子等对 5V 母线保护需求的场合。

主要参数(典型/标称):

  • 反向截止电压 Vrwm:5 V
  • 击穿电压(Vz):7 V
  • 钳位电压(Vc):9.2 V(在 10/1000 μs 峰值脉冲条件下)
  • 峰值脉冲电流 Ipp:163 A(10/1000 μs)
  • 峰值脉冲功率 Ppp:1.5 kW(10/1000 μs)
  • 反向电流 Ir:800 μA(在 Vrwm 条件下)
  • 通道数:单路(单向)
  • 工作温度:-55 ℃ ~ +150 ℃
  • 封装:SMC (DO-214AB)
  • 品牌:晶导微电子

二、核心性能解析

  • Vrwm = 5 V 意味着器件适配 5 V 电源线作为常态工作电压,正常工作时处于反向截止状态,直流漏电流 Ir 在 Vrwm 下为 800 μA(需留意温度相关上升)。
  • 击穿电压约 7 V,超过此电压后 TVS 进入雪崩导通状态,迅速夹断过电压。
  • 钳位电压 9.2 V(在 10/1000 μs 浪涌波形与指定电流下)说明在高能脉冲下仍能将电压控制在安全范围内,保护下游器件。
  • 163 A 的峰值脉冲电流与 1.5 kW 的峰值脉冲功率表明该器件在遭遇雷击或大电流浪涌时具有很强的能量吸收能力,但应避免频繁承受此类脉冲(需按能量累积和功率降额考量)。

三、典型应用

  • 5V 电源输入和总线的浪涌保护(USB、外设电源等)
  • 电源管理模块、开关电源和DC-DC 输出端保护
  • 通信接口、串口/并口保护及工业控制系统的输入保护
  • 充电器、适配器和电池管理系统过压防护

四、使用与布局建议

  • 对于单向 TVS,应将负极(anode)接到地,正极(cathode)接到被保护的正电源线上,平常呈反向偏置。
  • 放置位置应靠近易受浪涌影响的输入端或连接器,尽量缩短与被保护节点之间的走线,降低串联阻抗。
  • PCB 布局应提供足够的散热铜箔和过孔,保证高能脉冲时热量能可靠导出。焊盘尺寸与 SMC 标准封装匹配,遵循厂商推荐的焊盘和回流工艺。
  • 避免器件长期工作在接近击穿或钳位状态下;若系统可能长期承受高脉冲,应选择更高能量等级或并联冗余方案。

五、可靠性与选型注意事项

  • 注意漏电随温度上升而增加,在低功耗或精密模拟电路中需评估 Ir 带来的影响。
  • 峰值指标通常基于特定脉冲波形(10/1000 μs),实际应用中应参考 IEC/ITU 等标准测试条件,并考虑浪涌次数与能量累积对器件寿命的影响。
  • 若被保护线路为交流或双向浪涌(例如交流信号线),应选用双向型 TVS;本器件为单路单向(单极)设计。
  • 采购与设计前建议查阅晶导微电子完整 datasheet,核实最大额定值、可靠性数据、包装信息和标记规则。

如需器件管脚、典型电路图、热阻与实际测试曲线等详细数据,可参考晶导微电子提供的完整数据手册或联系供应商获取样片与技术支持。

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