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Jingdao Microelectronics BZT52C6V8SW
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Electronic BZT52C6V8SW
- Type
- Jingdao Microelectronics
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic
- Electronic Component
- BZT52C6V8SW
- Electronic Component
- 1
- Package
- SOD-323W
- Electronic Component
- Zener Diode
- Electronic Component
- 0.027g
- Electronic Component
- 50
- (Zzk)
- 80Ω
- (Zzt)
- 15Ω
- Electronic Component
- BM0262122623
- Diode
- 1
- Current(Ir)
- 2uA@4V
- Power Dissipation(Pd)
- 200mW
- Electronic Component
- 6.4V~7.2V
- Electronic Component
- 55℃~+150℃
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
BZT52C6V8SW 产品概述
一、产品简介
BZT52C6V8SW 是晶导微电子推出的一款独立式稳压二极管（Zener diode），标称稳压值为 6.8V，实际稳压范围 6.4V～7.2V。器件采用 SOD-323W 小型贴片封装，适合空间受限和自动贴片生产场合。其低电流下的反向漏电流仅 2µA（在 4V 时测得），适用于对漏电有严格要求的电路参考与保护场合。
二、主要电气参数
- 稳压值（标称）：6.8V；允许范围 6.4V～7.2V。
- 反向电流 Ir：2µA @ 4V（低漏电，利于高阻抗参考）。
- 耗散功率 Pd：200mW（封装限制的最大耗散，注意热管理）。
- 动态阻抗 Zzt：15Ω（在规定工作电流下，表示稳压小信号阻抗）。
- 膝值阻抗 Zzk：80Ω（在接近击穿起始点时的阻抗特性）。
- 工作结温范围：-55℃～+150℃。
三、封装与热性能
SOD-323W 小型表贴封装体积小、引脚间距短，便于高密度 PCB 布局。200mW 的耗散功率在实用电路中要求合理的热设计：尽量增大焊盘铜箔面积、必要时增加过孔或接地铜面以改善散热；高环境温度下应降低允许的稳压电流以防结温过高。
四、典型应用
- 作为低功耗电压基准或偏置源，用于模拟前端、传感器供电。
- 输入浪涌或过压钳位保护，保护后级电路免受短时电压尖峰伤害。
- 波形钳位与逻辑电平保护，因封装小巧适合便携和消费电子。
五、使用与选型建议
为保证长期可靠性，应避开连续接近最大耗散功率的工作点。设计时按照最大结温与导热条件进行功率余量计算；若工作电流或功率接近上限，考虑选用功率更高或低阻抗的封装型号。注意电路中的串联限流电阻和瞬态电流冲击，必要时配合抑制电容或瞬态抑制器件。
六、检验与质量控制建议
到货检验宜包含外观、管脚连通性、稳压值与漏电流抽测。可靠性试验可关注高温贮存、温度循环和焊接热应力后的稳压漂移情况。对于批量生产，应建立基于环境温度的功率降额表和 PCB 热仿真验证流程。
综上，BZT52C6V8SW 以其稳定的 6.8V 稳压特性、低漏电和小型 SOD-323W 封装，适合对空间和静态电流有要求的参考、保护与钳位应用，但在高功率或高温场合需注意热设计与选型余量。
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